PXAC241702FC-V1-R250 RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RFP-LD10M

Description
ThePXAC241702FC is a 28 V LDMOS FET with an asym metrical design intended for use in multi-standard cellular power amplifier ap-plications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions!4600 Silicon Drive | Durham, NC 27703 03, 2018-07-03PXAC241702FC Package H-37248-4Thermally-Enhanced High Power RF LDMOS FET150 W, 28 V, 2300 – 2400 MHzFeatures• Asymmetrical Doherty design - Main: P1dB = 60 W Typ- Peak: P1dB = 90 W Typ • Broadband internal input and output matching • Typical pulsed CW performance, 2350 MHz, 28 V, Doherty configuration - Output power at P1dB = 100 W- Efficiency = 49% - Gain = 17.5 dB• Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)• Capable of handling 10:1 VSWR @28 V, 120 W (CW) output power• Low thermal resistance• Pb-free and RoHS complian

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