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2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
Specifications
Brand Name :
ON
Model Number :
FDS6679AZ
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
10PCS
Price :
NEGOTIABLE
Payment Terms :
T/T, Western Union
Supply Ability :
10000PCS/WEEK
Delivery Time :
2-3DAYS
Packaging Details :
2500PC/REEL
Technology :
Si
Transistor Polarity :
P-Channel
Number of Channels :
1 Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Id - Continuous Drain Current :
13 A
Rds On - Drain-Source Resistance :
9.3 mOhms
Vgs - Gate-Source Voltage :
- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage :
3 V
Qg - Gate Charge :
96 nC
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Pd - Power Dissipation :
2.5W
Height :
1.75 mm
Length :
4.9 mm
Transistor Type :
1P Channel
Width :
3.9 mm
Fall Time :
92 ns
Rise Time :
15 ns
Typical Turn-Off Delay Time :
210 ns
Typical Turn-On Delay Time :
13 ns
Factory Pack Quantity :
2500
Description

FDS6679AZ MOSFET -30V P-Channel PowerTrench MOSFET This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs

1.General Description
This P-Channel MOSFET is producted using ONSemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs

2.Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely lowrDS(on)
High power and current handing capability
RoHS Compliant

2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel

Product tags

igbt rectifier circuit

,

n channel power mosfet

,

ktec power adaptor ksafk1900474t1m2
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2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel

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Product Detail
Brand Name :
ON
Model Number :
FDS6679AZ
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
10PCS
Price :
NEGOTIABLE
Contact Supplier
2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel

Shenzhen Hongxinwei Technology Co., Ltd

Site Member
6 Years
guangdong, shenzhen
Since 1998
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Electronic Integrated Circuits, IGBT Module, GPS Module
Total Annual :
50000000-70000000
Employee Number :
100~200
Certification Level :
Site Member
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