Specifications
Brand Name :
Infineon Technologies
Model Number :
BF999 E6327
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
10PCS
Price :
NEGOTIABLE
Payment Terms :
T/T, Western Union
Supply Ability :
12000PCS/WEEK
Delivery Time :
2-3DAYS
Packaging Details :
3000PCS/REEL
Transistor Polarity :
N-Channel
Technology :
Si
Id - Continuous Drain Current :
30 A
Vds - Drain-Source Breakdown Voltage :
20 V
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Height :
1 mm
Length :
2.9 mm
Width :
1.3 mm
Pd - Power Dissipation :
200mW
Vgs - Gate-Source Voltage :
6.5 V
Factory Pack Quantity :
3000
Description

BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode

1.Silicon N-Channel MOSFET Triode

For high-frequency stages up to 300 MHz preferably in FM applications
• Pb-free (RoHS compliant) package1)

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

2.Why choose us?

100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service

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BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

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Brand Name :
Infineon Technologies
Model Number :
BF999 E6327
Certification :
ROHS
Place of Origin :
CHINA
MOQ :
10PCS
Price :
NEGOTIABLE
Contact Supplier
BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW
BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

Shenzhen Hongxinwei Technology Co., Ltd

Site Member
6 Years
guangdong, shenzhen
Since 1998
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Total Annual :
50000000-70000000
Employee Number :
100~200
Certification Level :
Site Member
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