8 Gb, 1-bit ECC, ×8 I/O, 3 V VCC, NAND Flash Memory for Embedded

General Description
The Cypress S34ML08G1 8-Gb NAND is offered in 3.3 VCCwith x8 I/O interface. This document contains information for the
S34ML08G1 device, which is a dual-die stack of two S34ML04G1 die. For detailed specifications, please refer to the discrete die
datasheet: S34ML04G1.
Distinctive Characteristics
 Density
– 8 Gb (4 Gb 2)
 Architecture (For each 4 Gb device)
– Input / Output Bus Width: 8-bits
– Page Size: (2048 + 64) bytes; 64 bytes is spare area
– Block Size: 64 Pages or (128k + 4k) bytes
– Plane Size
– 2048 Blocks per Planeor (256M + 8M) bytes
–Device Size
– 2 Planes per Device or 512 Mbyte
 NAND Flash Interface
– Open NAND Flash Interface (ONFI) 1.0 compliant
– Address, Data and Commands multiplexed
 Supply Voltage
– 3.3 V device: Vcc = 2.7 V ~ 3.6 V
 Security
– One Time Programmable (OTP) area
– Hardware program/erase disabled during power transition
 Additional Features
– Supports Multiplane Program and Erase commands
– Supports Copy Back Program
– Supports Multiplane Copy Back Program
– Supports Read Cache
 Electronic Signature
– Manufacturer ID: 01h
 Operating Temperature
– Industrial: 40 °C to 85 °C
– Automotive: 40 °C to 105 °C
Performance
 Page Read / Program
– Random access: 25 µs (Max)
– Sequential access: 25 ns (Min)
– Program time / MultiplaneProgram time: 200 µs (Typ)
 Block Erase / Multiplane Erase (S34ML04G1)
– Block Erase time: 3.5 ms (Typ)
 Reliability
– 100,000 Program / Erase cycles (Typ)
(with 1 bit / 512 + 16 byte ECC)
– 10 Year Data retention (Typ)
– Blocks zero and one are valid and will be validfor at least
1000 program-erasecycles with ECC
 Package Options
– Lead Free and Low Halogen
– 48-Pin TSOP 12 20 1.2 mm
– 63-Ball BGA 9 *11*1mm

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