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Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
Specifications
Brand Name :
Infineon Technologies
Model Number :
SPW20N60C3
Certification :
Rohs
Place of Origin :
China
MOQ :
240pcs
Price :
Negotiation
Payment Terms :
T/T
Supply Ability :
7200PCS/1WEEK
Delivery Time :
2-3days
Packaging Details :
240pcs/box
Technology: :
Si
Mounting Style: :
Through Hole
Package / Case: :
TO-247-3
Number of Channels: :
1 Channel
Transistor Polarity: :
N-Channel
Vds - Drain-Source Breakdown Voltage: :
600V
Description

Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7

600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio.

Summary of Features:

  • Low specific on-state resistance (RDS(on)*A)
  • Very low energy storage in output capacitance (Eoss) @400V
  • Low gate charge (Qg)
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ technology has been manufactured by Infineon since 1998

Benefits:

  • High efficiency and power density
  • Outstanding cost/performance
  • High reliability
  • Ease-of-use

Target Applications:

  • Server
  • Telecom
  • Consumer
  • PC power
  • Adapter

Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3

Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3

Q1. What is your terms of packing?

A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes after getting your authorization letters.

Q2. What is your MOQ?

A: We provide you small MOQ for each item, it depends your specific order!

Q3. Do you test or check all your goods before delivery?

A: Yes, we have 100% test and check all goods before delivery.

Q4: How do you make our business long-term and good relationship?

A:We keep good quality and competitive price to ensure our customers benefit ;

We respect every customer as our friend and we sincerely do business and make friends with them,It's not something that can be replaced.

Q5: How to contact us?
A: Send your inquiry details in the below,Click "Send"Now!!!

Product tags

igbt gate voltage

,

mosfet igbt

,

igbt power module 100a 600v
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Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3

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Product Detail
Brand Name :
Infineon Technologies
Model Number :
SPW20N60C3
Certification :
Rohs
Place of Origin :
China
MOQ :
240pcs
Price :
Negotiation
Contact Supplier
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3

Shenzhen Hongxinwei Technology Co., Ltd

Site Member
6 Years
guangdong, shenzhen
Since 1998
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Electronic Integrated Circuits, IGBT Module, GPS Module
Total Annual :
50000000-70000000
Employee Number :
100~200
Certification Level :
Site Member
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