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NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect
NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect
NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect
NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect
Specifications
Brand Name :
ON
Model Number :
NDT3055L
Certification :
ROHS
Place of Origin :
CHIAN
MOQ :
10PCS
Price :
NEGOTIABLE
Payment Terms :
T/T, Western Union
Supply Ability :
20000PCS/WEEK
Delivery Time :
2-3DAYS
Packaging Details :
4000PCS/REEL
Product Category :
MOSFET
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Vds - Drain-Source Breakdown Voltage :
60 V
Id - Continuous Drain Current :
4 A
Rds On - Drain-Source Resistance :
70 mOhms
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
1 V
Qg - Gate Charge :
20 nC
Minimum Operating Temperature :
- 65 C
Maximum Operating Temperature :
+ 150 C
Pd - Power Dissipation :
3 W
Channel Mode :
Enhancement
Fall Time :
7 ns
Forward Transconductance - Min :
7 S
Rise Time :
7.5 ns
Typical Turn-Off Delay Time :
20 ns
Typical Turn-On Delay Time :
5 ns
Height :
1.8 mm
Length :
6.5 mm
Width :
3.5 mm
Factory packing quantity :
4000
Description

NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect

1.General Description
This Logic Level N−Channel enhancement mode power field effecttransistor is produced using onsemi’s proprietary, high cell density,DMOS technology. This very high density process is especiallytailored to minimize on−state resistance and provide superiorswitching performance, and withstand high energy pulse in theavalanche and commutation modes. This device is particularly suitedfor low voltage applications such as DC motor control and DC/DCconversion where fast switching, low in−line power loss, andresistance to transients are needed

2.Features
•4 A, 60 V♦RDS(ON) = 0.100 W @ VGS = 10 V
♦RDS(ON) = 0.120 W @ VGS = 4.5 V
•Low Drive Requirements Allowing Operation Directly from LogicDrivers. VGS(TH) < 2V.
•High Density Cell Design for Extremely Low RDS(ON).
•High Power and Current Handling Capability in a Widely UsedSurface Mount Package.
•This is a Pb−Free Device

NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect

Product tags

bd249c transistor

,

snubber circuit for igbt

,

ecu chip tuning obd2 edc16
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NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect

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Product Detail
Brand Name :
ON
Model Number :
NDT3055L
Certification :
ROHS
Place of Origin :
CHIAN
MOQ :
10PCS
Price :
NEGOTIABLE
Contact Supplier
NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect
NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect

Shenzhen Hongxinwei Technology Co., Ltd

Site Member
6 Years
guangdong, shenzhen
Since 1998
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Electronic Integrated Circuits, IGBT Module, GPS Module
Total Annual :
50000000-70000000
Employee Number :
100~200
Certification Level :
Site Member
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