Symbol

Term

Values

Unit

V_{S MAX.}

Max. supply voltage primary

+16

V

I_{S MAX.}

Max. supply current primary

330

mA

P_DC/DC

Total power of DC/DC isolation power output

4

W

V_in

Max. PWM input level V_inA; V_inB

V_S+0.5

V

V_iH

Max. logic signal input voltage

(Mode select;reset signal;external error)

V_S+0.5

V

I_OC

Max. logic signal output currect

(Open-collector output current)

10

mA

I_outAV

Output average current per channel

80

mA

I_outPEAK

Output peak current per channel

±25

A

V_CES

IGBT collector-emitter voltage

1700

V

V_{isol IO}

Isolation voltage IN-OUT(10 sec.AC)

5000

V

V_{isol AB}

Isolation voltage OUT A-OUT B(10 sec.AC)

2500

V

R_{Gon/off min}

Minimal R_gon/R_goff

1

Ω

Q_out/pulse

Charge per pulse

±10^①

μC

dv/dt

Rate of rise and fall of voltage

75

kV/μs

f_{SW max}

Max. working frequency

100

kHz

T_op

Operating temperature

-40...+85

℃

T_stg.

Storage temperatature

-45...+85

℃

Symbol

Term

Parameter

Unit

Min.

Typ.

Max.

Rec.

V_S

Supply voltage primary

14.5

15

15.5

15

V

I_S

No-load currect primary

f_SW= 0kHz

f_SW=20kHz

f_SW=100kHz

-

80

100

130

mA

V_IT+

Input high level:

15V level

5V level

--

12

3.2

V

V_IT-

Input low level:

15V level

5V level

--

4.5

1.9

V

R_in

Input resistance

33

kΩ

V_G(on)

Turn-on gate voltage

+15

V

V_G(off)

Turn-off gate voltage

-9

V

t_d(on)IO

IN-OUT turn-on delay time

650

ns

t_d(off)IO

IN-OUT turn-off delay time

600

ns

t_d(err)

Error signal return delay time

V_CEerror happen-error signal output

110

ns

t_md

Narrow pulse restrained

400

ns

V_CEstat

Reference voltage for V_CEmonitoring

V_CE=1700V

V_CE=1200V

2

-

-

6.8

-

-

-

6.2

5.3

V

V_Level

Logic level (External error input; reset signal; mode select)

+8

+15

V

t_pReset

V_ininput both Low reset time

10

μs

t_TD

Dead time adjusted from factory

(half-bridge interlock mode)

.05^②

5

μs

C_PS

Primary to secondary capacitance

12

pf