SiC RTA Tray
Silicon Carbide RTA tray is formed by isostatic pressing process and sintering at high temperature. The outer diameter, thickness, number and size of acupoints, position and shape of the tablet groove can also be finished according to the requirements of the user's design drawings to meet the specific requirements of the user.
Typical applications
RTA rapid high temperature heat treatment process in LED chip manufacturing.
Features and advantages
Excellent thermal conductivity, low coefficient of expansion and thermal shock resistance.
Plasma impact resistance
Resistant to all kinds of strong acid and alkali chemical reagent corrosion
Specifications
Can be processed according to customer drawings, the maximum size: 500mm*500mm
Silicon Carbide RTA Tray