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500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
Specifications
Brand Name :
ZG
Model Number :
MS
Certification :
CE
Place of Origin :
CHINA
MOQ :
1 piece
Price :
USD10/piece
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
10000 pieces per month
Delivery Time :
3 working days
Packaging Details :
Strong wooden box for Global shipping
Application :
microelectronics , optoelectronics and RF Microwave
Diameter :
Ø 3" / Ø 4" GaAs wafer
Thickness :
500 um ~ 625 um
Grade :
Epi polished grade / mechanical grade
Description

GaAs Based Epi Wafer

We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 3" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( LT-GaAs , AlAs ) or ternary alloy ( AlGaAs , InGaAs ,GaAsP , InGaP ) on GaAs substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your GaAs epi layer structure . Please contact us for more product information or discuss your epi layer structure .

GaAs Based Epi Wafer Capability

Our reactors are configured for a variety of material systems and process conditions. We can provide custom epitaxy for a variety of device applications ranging from LEDs to HEMTs .

Material Capability Substrate Wafer Size
GaAs/GaAs GaAs wafer Up to 4 inch
LT-GaAs/GaAs GaAs wafer Up to 4 inch
AlAs/GaAs GaAs wafer Up to 4 inch
InAs/GaAs GaAs wafer Up to 4 inch
AlGaAs/GaAs GaAs wafer Up to 4 inch
InGaAs/GaAs GaAs wafer Up to 4 inch
InGaP/GaAs GaAs wafer Up to 4 inch
GaAsP/GaAs GaAs wafer Up to 4 inch

Optoelectronic applications:

Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides.

Electronic applications:

FETs, HBTs, HEMTs, diodes, Microwave devices.

Epi Layer Structure ( HEMT / HBT )

Growth MOCVD
Dopant source P type / Be , N type / Si
Cap layer i-GaAs layer
Active layer n-AlGaAs layer
Space layer i-AlGaAs layer
Buffer layer i-GaAs layer
Substrate Ø 3" / Ø 4" GaAs wafer

Product tags

semiconductor wafer fabrication

,

rockwell hardness properties

,

semiconductor wafer fabrication process
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500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade

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Product Detail
Brand Name :
ZG
Model Number :
MS
Certification :
CE
Place of Origin :
CHINA
MOQ :
1 piece
Price :
USD10/piece
Contact Supplier
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade
500Um To 625Um GaAs Based Epi Wafer Polished Grade mechanical grade

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Verified Supplier
5 Years
henan, zhengzhou
Since 2007
Business Type :
Manufacturer, Distributor/Wholesaler, Importer, Exporter
Main Products :
Sic Heating Elements, MoSi2 Heating Elements, Industrial Ceramic Parts
Total Annual :
5000000-8000000
Employee Number :
50~100
Certification Level :
Verified Supplier
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