Specifications
Brand Name :
ZG
Model Number :
MS
Certification :
CE
Place of Origin :
CHINA
MOQ :
1 piece
Price :
USD10/piece
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
10000 pieces per month
Delivery Time :
3 working days
Packaging Details :
Strong wooden box for Global shipping
Application :
integrated circuits , detector / sensor device , MEMS fabrication, opto-electronic components, and solar cells
Diameter :
Ø 4"/ Ø 6" / Ø 8"
Device Thickness :
2 um ~ 300 um
Coating :
Oxide and nitride can be supplied on both sides of SOI wafer
Description

SOI Wafer ( Silicon-on-Insulator )

We provides high quality SOI wafer ( Silicon-on-Insulator ) for a varity of application including MEMS , Power device , Pressure sensors and CMOS integrated circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer ( active layer ) on top , a buried oxide layer ( insulating SiO2 layer ) in the middle , and a handle wafer ( bulk silicon ) in the bottom . SOI wafers are produced by using SIMOX and wafer bonding technology to achieve thinner and precise device layer and ensure the requirement of thickness uniformity and low defect density . We can provide SOI wafer in diameter 4" and 8 " with flexible thickness and wide resistivity range to meet your unique SOI requirements . Contact us for further SOI product informations .

SOI Wafer Application

High-speed ICs High-temperature ICs
Low-power ICs Low-voltage ICs
Microwave components Power device
MEMS Semiconductor

Product Specification

Method Fusion bonding
Diameter Ø 4"/ Ø 6" / Ø 8"
Device thickness 2 um ~ 300 um
Tolerance +/- 0.5 um ~ 2 um
Orientation <100> / <111> / <110> or others
Conductivity P - type / N - type / Intrinsic
Dopant Boron / Phosphorous / Antimony / Arsenic
Resistivity 0.001 ~ 100000 ohm-cm
Oxide thickness 500A ~ 4 um
Tolerance +/- 5%
Handle wafer >= 300 um
Surface Double sides polished
Coating Oxide and nitride can be supplied on both sides of SOI wafer

2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

Send your message to this supplier
Send Now

2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

Ask Latest Price
Brand Name :
ZG
Model Number :
MS
Certification :
CE
Place of Origin :
CHINA
MOQ :
1 piece
Price :
USD10/piece
Contact Supplier
2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer
2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer
2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer
2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Verified Supplier
5 Years
henan, zhengzhou
Since 2007
Business Type :
Manufacturer, Distributor/Wholesaler, Importer, Exporter
Total Annual :
5000000-8000000
Employee Number :
50~100
Certification Level :
Verified Supplier
Contact Supplier
Submit Requirement