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Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Specifications
Brand Name :
ZG
Model Number :
MS
Certification :
CE
Place of Origin :
CHINA
MOQ :
1 piece
Price :
USD10/piece
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
10000 pieces per month
Delivery Time :
3 working days
Packaging Details :
Strong wooden box for Global shipping
Application :
making LD , LED , microwave circuit and solar cell applications
Diameter :
Ø 2" / Ø 3" / Ø 4"
Thickness :
350 um ~ 625 um
Grade :
Epi polished grade / mechanical grade
Description

Single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for making LD , LED , microwave circuit, solar cell

We provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) to opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , in diameter range from 2" to 4 ". We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical propertirs and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafers , both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications , please contact us for more product information .

GaAs Wafer Feature and Application

Feature Application field
High electron mobility Light emitting diodes
High frequency Laser diodes
High conversion efficiency Photovoltaic devices
Low power consumption High Electron Mobility Transistor
Direct band gap Heterojunction Bipolar Transistor

Product Specification

Growth LEC / VGF
Diameter Ø 2" / Ø 3" / Ø 4"
Thickness 350 um ~ 625 um
Orientation <100> / <111> / <110> or others
Conductivity P - type / N - type / Semi-insulating
Dopant Zn / Si / undoped
Surface One side polished or two sides polished
Concentration 1E17 ~ 5E19 cm-3
TTV <= 10 um
Bow / Warp <= 20 um
Grade Epi polished grade / mechanical grade

Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

Product tags

semiconductor gaas

,

gaas semiconductor

,

crystal light emitting diodes
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Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

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Product Detail
Brand Name :
ZG
Model Number :
MS
Certification :
CE
Place of Origin :
CHINA
MOQ :
1 piece
Price :
USD10/piece
Contact Supplier
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit
Single Crystal Polycrystalline GaAs Wafer Gallium Arsenide For LD LED Microwave Circuit

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Verified Supplier
5 Years
henan, zhengzhou
Since 2007
Business Type :
Manufacturer, Distributor/Wholesaler, Importer, Exporter
Main Products :
Sic Heating Elements, MoSi2 Heating Elements, Industrial Ceramic Parts
Total Annual :
5000000-8000000
Employee Number :
50~100
Certification Level :
Verified Supplier
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