SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip
Product Description Of IMW65R027M1H
IMW65R027M1H is 650V CoolSiC M1 SiC Trench Power Device, N-Channel Single FETs MOSFETs Transistors.
Specification Of IMW65R027M1H
Part Number | IMW65R027M1H |
Technology
|
SiCFET (Silicon Carbide)
|
Drive Voltage (Max Rds On, Min Rds On)
|
18V
|
Rds On (Max) @ Id, Vgs
|
34mOhm @ 38.3A, 18V
|
Vgs(th) (Max) @ Id
|
5.7V @ 11mA
|
Gate Charge (Qg) (Max) @ Vgs
|
62 nC @ 18 V
|
Vgs (Max)
|
+23V, -5V
|
Input Capacitance (Ciss) (Max) @ Vds
|
2131 pF @ 400 V
|
Power Dissipation (Max)
|
189W (Tc)
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
Supplier Device Package
|
PG-TO247-3-41
|
Applications Of IMW65R027M1H
Other Supply Product Types
Part Number | Package |
CY9BF324MBGL-GK9E1 | QFP |
SPC5777MK0MVA8 | FBGA-512 |
SPC5634MF2MLQ80 | LQFP-144 |
SPC5645SF1VLT | LQFP208 |
SPC5602PEF0MLL6 | LQFP100 |
SPC5748CBK0AMKU6 | HTSSOP14 |
FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.