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IMBG120R140M1H Integrated Circuit Chip 1200V SiC MOSFET Transistors TO-263-7 Package
IMBG120R140M1H Integrated Circuit Chip 1200V SiC MOSFET Transistors TO-263-7 Package
Specifications
Brand Name :
Original Factory
Model Number :
IMBG120R140M1H
Certification :
Lead free / RoHS Compliant
Place of Origin :
CN
MOQ :
10
Price :
Contact for Sample
Payment Terms :
T/T, L/C, Western Union
Delivery Time :
5-8 work days
Packaging Details :
PG-TO263-7-12
Part Number :
IMBG120R140M1H
FET Type :
N-Channel
Technology :
Silicon Carbide
Package :
PG-TO263-7-12
Mounting Type :
Surface Mount
FET Feature :
Standard
Description

Integrated Circuit Chip IMBG120R140M1H 1200 V SiC Trench MOSFET Transistors in TO-263-7 package


Specification Of IMBG120R140M1H

Product Status

Active

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Rds On (Max) @ Id, Vgs

189mOhm @ 6A, 18V

Vgs(th) (Max) @ Id

5.7V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

13.4 nC @ 18 V

Vgs (Max)

+18V, -15V

Input Capacitance (Ciss) (Max) @ Vds

491 pF @ 800 V

FET Feature

Standard

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Features of IMBG120R140M1H
Very low switching losses
Short circuit withstand time 3 µs
Fully controllable dV/dt
Benchmark gate threshold voltage, VGS(th) = 4.5V
Robust against parasitic turn on, 0V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
Package creepage and clearance distance > 6.1mm
Sense pin for optimized switching performance

Benefits of IMBG120R140M1H
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost

Potential applications of IMBG120R140M1H
Drives
Infrastructure – Charger
Energy generation - Solar string inverter and solar optimizer
Industrial power supplies - Industrial UPS

FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Product tags

qsfp28 specification

,

aisi 316l properties

,

8c chip for mazda
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IMBG120R140M1H Integrated Circuit Chip 1200V SiC MOSFET Transistors TO-263-7 Package

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Product Detail
Brand Name :
Original Factory
Model Number :
IMBG120R140M1H
Certification :
Lead free / RoHS Compliant
Place of Origin :
CN
MOQ :
10
Price :
Contact for Sample
Contact Supplier
IMBG120R140M1H Integrated Circuit Chip 1200V SiC MOSFET Transistors TO-263-7 Package

ShenZhen Mingjiada Electronics Co.,Ltd.

Verified Supplier
3 Years
shenzhen
Business Type :
Distributor/Wholesaler
Main Products :
Integrated Circuit Chip, BT IC, Automotive IGBT Modules
Total Annual :
1000000-2000000
Employee Number :
20~50
Certification Level :
Verified Supplier
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