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IS42S32800J-7BLI IC DRAM 256MBIT PAR 90TFBGA ISSI, Integrated Silicon Solution Inc
IS42S32800J-7BLI IC DRAM 256MBIT PAR 90TFBGA ISSI, Integrated Silicon Solution Inc
Specifications
Brand Name :
ISSI, Integrated Silicon Solution Inc
Model Number :
IS42S32800J-7BLI
MOQ :
1
Price :
Based on current price
Payment Terms :
T/T
Supply Ability :
In stock
Delivery Time :
3-5 work days
Packaging Details :
anti-static bag & cardboard box
Memory Type :
Volatile
Memory Format :
DRAM
Technology :
SDRAM
Memory Size :
256Mbit
Memory Organization :
8M x 32
Memory Interface :
Parallel
Clock Frequency :
143 MHz
Write Cycle Time - Word, Page :
-
Access Time :
5.4 ns
Voltage - Supply :
3V ~ 3.6V
Operating Temperature :
-40°C ~ 85°C (TA)
Mounting Type :
Surface Mount
Package / Case :
90-TFBGA
Supplier Device Package :
90-TFBGA (8x13)
Description

Product Details

OVERVIEW

ISSIs 64Mb Synchronous DRAM IS42S32200 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

GENERAL DESCRIPTION
The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.

FEATURES

• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Industrial temperature availability
• Package 400-mil 86-pin TSOP II

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series -
Packaging Tray Alternate Packaging
Package-Case 90-TFBGA
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 3 V ~ 3.6 V
Supplier-Device-Package 90-TFBGA (8x13)
Memory Capacity 256M (8M x 32)
Memory-Type SDRAM
Speed 143MHz
Format-Memory RAM

Descriptions

SDRAM Memory IC 256Mb (8M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 90-Pin TFBGA
DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
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IS42S32800J-7BLI IC DRAM 256MBIT PAR 90TFBGA ISSI, Integrated Silicon Solution Inc

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Product Detail
Brand Name :
ISSI, Integrated Silicon Solution Inc
Model Number :
IS42S32800J-7BLI
MOQ :
1
Price :
Based on current price
Payment Terms :
T/T
Supply Ability :
In stock
Contact Supplier
IS42S32800J-7BLI IC DRAM 256MBIT PAR 90TFBGA ISSI, Integrated Silicon Solution Inc

Sanhuang electronics (Hong Kong) Co., Limited

Verified Supplier
3 Years
shenzhen
Since 2005
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit IC, RF IC Module, Power Management ICs
Total Annual :
1000000-3000000
Employee Number :
100~150
Certification Level :
Verified Supplier
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