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TH58NVG3S0HTAI0 IC FLASH 8GBIT PARALLEL 48TSOP I Kioxia America, Inc.
TH58NVG3S0HTAI0 IC FLASH 8GBIT PARALLEL 48TSOP I Kioxia America, Inc.
Specifications
Brand Name :
Kioxia America, Inc.
Model Number :
TH58NVG3S0HTAI0
MOQ :
1
Price :
Based on current price
Payment Terms :
T/T
Supply Ability :
In stock
Delivery Time :
3-5 work days
Packaging Details :
anti-static bag & cardboard box
Memory Type :
Non-Volatile
Memory Format :
FLASH
Technology :
FLASH - NAND (SLC)
Memory Size :
8Gbit
Memory Organization :
1G x 8
Memory Interface :
Parallel
Clock Frequency :
-
Write Cycle Time - Word, Page :
25ns
Access Time :
25 ns
Voltage - Supply :
2.7V ~ 3.6V
Operating Temperature :
-40°C ~ 85°C (TA)
Mounting Type :
Surface Mount
Package / Case :
48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package :
48-TSOP I
Description

Product Details

[Toshiba]

2GBIT (256M u 8BITS) CMOS NAND E2PROM

DESCRIPTION

The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages).
The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density nonvolatile memory data storage.

FEATURES

• Organization
Memory cell allay 2112 u 64K u 8 u 2
Register 2112 u 8
Page size 2112bytes
Block size (128K 4K) bytes
• Modes
Read, Reset, Auto Page Program
Auto Block Erase, Status Read
• Mode control
Serial input㧛output
Command control
• Powersupply VCC 2.7 V to 3.6 V
• Program/Erase Cycles 1E5 Cycles(With ECC)
• Access time
Cell array to register 25 μs max
Serial Read Cycle 50 ns min
• Operating current
Read (50 ns cycle) 10 mA typ.
Program (avg.) 10 mA typ.
Erase (avg.) 10 mA typ.
Standby 50 μA max
• Package
TSOP I 48-P-1220-0.50(Weight : 0.53 g typ.)

Specifications

Attribute Attribute Value
Manufacturer TOSHIBA
Product Category Memory ICs
Series -
Packaging Tray
Package-Case 48-TFSOP (0.724", 18.40mm Width)
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel/Serial
Voltage-Supply 2.7 V ~ 3.6 V
Supplier-Device-Package 48-TSOP I
Memory Capacity 8G (1G x 8)
Memory-Type EEPROM - NAND
Speed 25ns
Format-Memory EEPROM - Serial I/O Data Bus

Descriptions

NAND Flash Parallel 3.3V 8G-bit 1G x 8
EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM
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TH58NVG3S0HTAI0 IC FLASH 8GBIT PARALLEL 48TSOP I Kioxia America, Inc.

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Product Detail
Brand Name :
Kioxia America, Inc.
Model Number :
TH58NVG3S0HTAI0
MOQ :
1
Price :
Based on current price
Payment Terms :
T/T
Supply Ability :
In stock
Contact Supplier
TH58NVG3S0HTAI0 IC FLASH 8GBIT PARALLEL 48TSOP I Kioxia America, Inc.

Sanhuang electronics (Hong Kong) Co., Limited

Verified Supplier
3 Years
shenzhen
Since 2005
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit IC, RF IC Module, Power Management ICs
Total Annual :
1000000-3000000
Employee Number :
100~150
Certification Level :
Verified Supplier
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