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High Breakdown Voltage Silicon Carbide SBD For Data Center
High Breakdown Voltage Silicon Carbide SBD For Data Center
Specifications
Brand Name :
LX
Certification :
Rohs,Reach,SGS,ISO9001,ISO14001,IATF16949
Place of Origin :
China
MOQ :
Inquire
Price :
Inquire
Payment Terms :
T/T in advance(EXW)
Supply Ability :
600KK/year
Delivery Time :
2-30days(Depends on the quantity of the order)
Packaging Details :
Tube+Carton
Device Type :
Sic Schottky barrier diode
Switching Speed :
High-speed switching
Applications :
SMPS,Solar inverter,Date center,UPS
Benefits :
Low heat dissipation requirements
Description

High Breakdown Voltage Silicon Carbide SBD For Data Center

Features
·Negligible reverse recovery
·High surge current
·Positive temperature coefficient
·Higher frequency
·Halogen-free / RoHS compliant

APPLICATIONS
·SMPS
·Solar inverter
·Data Center
·UPS
Benefits
·High-speed switching
·Low heat dissipation requirements
·Reduce size and cost of the system
·High-reliability
High Breakdown Voltage Silicon Carbide SBD For Data Center
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High Breakdown Voltage Silicon Carbide SBD For Data Center

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Product Detail
Brand Name :
LX
Certification :
Rohs,Reach,SGS,ISO9001,ISO14001,IATF16949
Place of Origin :
China
MOQ :
Inquire
Price :
Inquire
Payment Terms :
T/T in advance(EXW)
Contact Supplier
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High Breakdown Voltage Silicon Carbide SBD For Data Center

Guangdong Lingxun Microelectronics Co., Ltd

Verified Supplier
1 Years
guangdong, dongguan
Since 2012
Business Type :
Manufacturer, Seller
Main Products :
Inverter IGBT, High Power IGBT, High Power MOSFET
Total Annual :
>40000000
Employee Number :
>200
Certification Level :
Verified Supplier
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