Specifications
Brand Name :
JOPTEC
Place of Origin :
HEFEI, CHINA
MOQ :
10 PCS
Payment Terms :
T/T
Supply Ability :
5000000 PCS/Month
Delivery Time :
30 Days
Packaging Details :
Boxes
Material :
GaN
Type :
GaN-FS-10, GaN-FS-15
Orientation :
C-axis(0001) ± 0.5°
TTV :
≤15 µm
BOW :
≤20 µm
Carrier Concentration :
>5x1017/cm3
Typical thickness (mm) :
N-type, Semi-Insulating
Resistivity(@300K) :
< 0.5 Ω•cm, >106 Ω•cm
Usable Surface Area :
> 90%
Description

With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices. Based on the stable physical and chemical properties, GaN is suitable for LED applications (blue, green, UV-light), ultraviolet detectors and optoelectronic high-power and high-frequency devices.

Specification
Type GaN-FS-10 GaN-FS-15
Size 10.0mm×10.5mm 14.0mm×15.0mm
Thickness

Rank 300, Rank 350,

Rank 400

300 ± 25 µm, 350 ± 25 µm,

400 ± 25 µm

Orientation C-axis(0001) ± 0.5°
TTV ≤15 µm
BOW ≤20 µm
Carrier Concentration >5x1017/cm3 /
Conduction Type N-type Semi-Insulating
Resistivity(@300K) < 0.5 Ω•cm >106 Ω•cm
Dislocation Density Less than 5x106 cm-2
Useable Surface Area > 90%
Polishing

Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground

Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.
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GaN Substrates

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Brand Name :
JOPTEC
Place of Origin :
HEFEI, CHINA
MOQ :
10 PCS
Payment Terms :
T/T
Supply Ability :
5000000 PCS/Month
Delivery Time :
30 Days
Contact Supplier
GaN Substrates

JOPTEC LASER CO., LTD

Verified Supplier
5 Years
anhui, hefei
Since 1988
Business Type :
Manufacturer, Distributor/Wholesaler
Total Annual :
50000000-100000000
Employee Number :
500~1000
Certification Level :
Verified Supplier
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