K9F4G08U0D-SIB0 Samsung Chip Component Assembled
Detail Information:
1, Part Name: Chip Component
2, Model:K9F4G08U0D-SIB0
3, Brand: Samsung
4, Condition: Original New
5, Origin: Korean

- Manufacturer Part Number:
K9F4G08U0D-SIB0000
- Rohs Code:
Yes
- Part Life Cycle Code:
Obsolete
- Package Description:
12 X 20 MM, 0.50 MM PITCH, HALOGEN AND LEAD FREE, PLASTIC, TSOP1-48
- Manufacturer:
Samsung Semiconductor
- Risk Rank:
5.84
- Access Time-Max:
25 ns
- Command User Interface:
YES
- Data Polling:
NO
- JESD-30 Code:
R-PDSO-G48
- Length:
18.4 mm
- Memory Density:
4294967296 bit
- Memory IC Type:
FLASH
- Memory Width:
8
- Number of Functions:
1
- Number of Sectors/Size:
4K
- Number of Terminals:
48
- Number of Words:
536870912 words
- Number of Words Code:
512000000
- Operating Mode:
ASYNCHRONOUS
- Operating Temperature-Max:
85 °C
- Operating Temperature-Min:
-40 °C
- Organization:
512MX8
- Package Body Material:
PLASTIC/EPOXY
- Package Code:
TSOP1
- Package Equivalence Code:
TSSOP48,.8,20
- Package Shape:
RECTANGULAR
- Package Style:
SMALL OUTLINE, THIN PROFILE
- Page Size:
2K words
- Parallel/Serial:
PARALLEL
- Peak Reflow Temperature (Cel):
NOT SPECIFIED
- Power Supplies:
3/3.3 V
- Programming Voltage:
3.3 V
- Qualification Status:
Not Qualified
- Ready/Busy:
YES
- Seated Height-Max:
1.2 mm
- Sector Size:
128K
- Standby Current-Max:
0.00005 A
- Subcategory:
Flash Memories
- Supply Current-Max:
0.03 mA
- Supply Voltage-Max (Vsup):
3.6 V
- Supply Voltage-Min (Vsup):
2.7 V
- Supply Voltage-Nom (Vsup):
3.3 V
- Surface Mount:
YES
- Technology:
CMOS
- Temperature Grade:
INDUSTRIAL
- Terminal Form:
GULL WING
- Terminal Pitch:
0.5 mm
- Terminal Position:
DUAL
- Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
- Toggle Bit:
NO
- Type:
NAND TYPE
- Width:
12 mm