High power density with Trench FS IGBT technology
Low VCE(sat)
Parallel operation enabled ; symmetrical design & positive temperature coefficient
Low inductance design
Integrated NTC temperature sensor
Isolated baseplate using DBC technology
Compact and robust design with molded terminals
TYPE | VBR Volts | VGS(th) Volts | ID Amps | RDS(on) mΩ | IDSS uA | TJ | Rth(JC) K/W | Ptot Watts | Circuit | Package | Technology |
KES400H12A8L-2M | 1200V | 3.2V | 400A | 3.7mΩ | 200uA | 175℃ | 0.064 | 2230W | 2 Pack | ECDUAL3 | SIC MOSFET |
KES650H12A8L-2M | 1200V | 3.2V | 650A | 2.2mΩ | 200uA | 175℃ | 0.064 | 3200W | 2 Pack | SIC MOSFET |