Infrared led light emitting diode 3 Chips in One 0.2W SMD 5050 IR LED 940nm
SMD 5050 Infrared Emitting Diode
Parameters | Symbol | Max. | Unit |
Power Dissipation | PD | 130 | mW |
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width) | IFP | 1.00 | A |
Continuous Forward Current | IF | 65 | mA |
Reverse Voltage | VR | 5 | V |
Operating Temperature Range | Topr | -25℃ to +80℃ | |
Storage Temperature Range | Tstg | -40℃ to +85℃ | |
Soldering Temperature | Tsld | 260℃ for 5 Seconds |
Electrical Optical Characteristics at Ta=25℃
Parameters | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
Radiant Intensity * | Ee | 1.00 | 1.50 | --- | mW/sr | IF=20mA |
--- | 7.00 | --- | IF=100mA (Pulse Width≤100µs, Duty≤1%) | |||
Viewing Angle * | 2θ 1/2 | --- | 120 | --- | Deg | IF=20mA (Note 2) |
Peak Emission Wavelength | λp | --- | 940 | --- | nm | IF=20mA (Note 3) |
Spectral Bandwidth | △λ | --- | 45 | --- | nm | IF=20mA |
Forward Voltage | VF | 0.80 | 1.20 | 1.50 | V | IF=20mA |
--- | 1.40 | 1.80 | IF=100mA (Pulse Width≤100µs, Duty≤1%) | |||
Reverse Current | IR | --- | --- | 10 | µA | VR=5V |
Notes:
Luminous (Radiant) Intensity Measurement allowance is ± 10%. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.