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5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
Specifications
Brand Name :
Double Light
Model Number :
DL-503PTE-1PT
Certification :
ROHS/ REACH
Place of Origin :
China
MOQ :
5,000pcs/Real
Payment Terms :
Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability :
2,000,000pcs per day
Delivery Time :
10-15working days after received your payment
Packaging Details :
Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Product Name :
5mm Cylindrical With Flange Phototransistor
Package :
DIP 5mm Round Standard T-1 3/4 diameter
Chip Material :
Silicon
Lens Type :
Water Clear
Source Color :
Phototransistor
Wavelength Of Peak Sensitivity :
940nm
Shape :
Cylindrical With Flange
Reception Angle :
100 Degree
Power :
75mA
Collector-Emitter Voltage :
30V
Collector Current :
20mA
Rang Of Spectral Bandwidth :
700-1200nm
Description

5mm Cylindrical With Flange silicon NPN Phototransistor infrared transceiver 940nm infrared led in Optoelectronic switch

DL-503PTE-1PT.pdf

Features:

  1. Fast response time.
  2. High photo sensitivity.
  3. Small junction capacitance.
  4. The product itself will remain within RoHS compliant Version.


Descriptions:

  1. The 503PT is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
  2. Due to its black epoxy, the device is matched to visible light and infrared radiation.


Applications:

  1. Infrared applied system.
  2. Optoelectronic automatic control system.
  3. Optoelectronic switch.
  4. Camera.
  5. Printer.
  6. Counters and sorters.
  7. Encoders.
  8. Floppy disk drive.
  9. Video camera, tape and card readers.
  10. Position sensors.


Package Dimension:


Part No. Chip Material Lens Color Source Color
DL-503PTE-1PT Silicon Water Clear Phototransistor

Notes:

  1. All dimensions are in millimeters (inches).
  2. Tolerance is ± 0.25 mm (.010″) unless otherwise specified
  3. Protruded resin under flange is 1.00 mm (.039″) max.
  4. Specifications are subject to change without notice.


Absolute Maximum Ratings at Ta=25℃

Parameters Symbol Rating Unit
Power Dissipation PD 75 mW
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector-Voltage VECO 5 V
Collector Current IC 20 mA
Operating Temperature TOPR -40 to +85 ℃
Storage Temperature TSTG -40 to +100 ℃
Lead Soldering Temperature TSOL 260℃ ℃



Electrical Optical Characteristics at Ta=25℃

Parameters Symbol Min. Typ. Max. Unit Condition
Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

IC=100μA,

Ee=0mW/cm²
Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

IE=100μA,

Ee=0mW/cm²
Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

IC=0.70mA,

Ee=1mW/cm2
Collector Dark Current ICEO --- --- 100 nA

Ee=0mW/cm²,

VCE=20V
On-State Collector Current IC(ON) 0.70 2.00 --- mA

Ee=1mW/cm²,

VCE=5V
Optical Rise Time (10% to 90%) TR --- 15 --- μs

VCE=5V,

IC=1mA,

RL=1000Ω
Optical Fall Time (90% to 10%) TF --- 15 ---
Reception Angle 2θ1/2 --- 100 --- Deg
Wavelength Of Peak Sensitivity λP --- 940 --- nm
Rang Of Spectral Bandwidth λ0.5 700 --- 1200 nm


Typical Electrical / Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)





Why choose DOUBLE LIGHT?
1. Well-known chip material
2. 99.99% gold wire bonding
3. 3 years warranty
4. Over 10 years work experience technical service team
5. 24 hours service Professional sales team
6. Free Sample is available
7. Fast delivery
8.100% QC inspection Before Shippment
9. Aiming at the consult of "high quality, zero defect”, give you the best quality, best service.





Please contact with me to help you find your right product and get your best price .
Tel: 86-755-82853859
Fax: 86-755-83229774
Email:wendy@doublelight.com.cn
Wechat:+86 13423609933
Skype:wendy@doublelight.com.cn
Whatsapp:+86 13423609933

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5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver

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Product Detail
Brand Name :
Double Light
Model Number :
DL-503PTE-1PT
Certification :
ROHS/ REACH
Place of Origin :
China
MOQ :
5,000pcs/Real
Payment Terms :
Telegraphic Transfer in Advance (Advance TT, T/T)
Contact Supplier
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver
5mm Cylindrical Infrared Emitting Diode With Flange Silicon NPN Phototransistor Infrared Transceiver

DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD

Site Member
9 Years
guangdong, shenzhen
Since 2005
Business Type :
Manufacturer
Main Products :
LED Light Components, Infrared Emitting Diode, SMD Chip LED
Total Annual :
25 million-30 milion
Employee Number :
600~800
Certification Level :
Site Member
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