1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm

Subminiature Axial Infrared Emitting Diode

1. Package in 12mm tape on 7" diameter reels.
   ◇ Small double-end package.
   ◇ EIA Std. package.
   ◇ High reliability.
   ◇ Low forward voltage.
   ◇ Compatible with automatic placement equipment.
   ◇ The product itself will remain within RoHS compliant version.
   ◇ The device is an infrared emitting diode in miniature SMD package which is molded in water clear plastic.
   ◇ The device is much smaller than leaded components. Thus enable smaller board size. Higher packing density. Reduced storage space and finally smaller equipment to be obtained.
   ◇ The device is specially matched with photodiode, phototransistor and infrared receiver module.
   ◇ PCB mounted infrared sensor.
   ◇ Infrared emitting for miniature light barrier.
   ◇ Floppy disk drive.
   ◇ Optoelectronic switch.
   ◇ Smoke detector.

1. Absolute Maximum Ratings at Ta=25℃

   Parameters	Symbol	Max.	Unit
   Power Dissipation	PD	100	mW
   Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	1.00	A
   Continuous Forward Current	IF	50	mA
   Reverse Voltage	VR	5	V
   Operating Temperature Range	Topr	-40℃ to +80℃
   Storage Temperature Range	Tstg	-40℃ to +85℃
   Soldering Temperature	Tsld	260℃ for 5 Seconds

   Electrical Optical Characteristics at Ta=25℃

   Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
   Radiant Intensity (Note 1) *	Ee	---	2.70	---	mW/sr	IF=20mA
   Viewing Angle (Note 2) *	2θ1/2	---	25	---	Deg	IF=20mA
   Peak Emission Wavelength	λp	---	850	---	nm	IF=20mA
   Spectral Bandwidth	△λ	---	45	---	nm	IF=20mA
   Forward Voltage	VF	---	1.40	1.90	V	IF=20mA
   Reverse Current	IR	---	---	10	µA	VR=5V

   Notes:

   1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

   2. θ_1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.