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IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3
IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3
Specifications
Brand Name :
Infineon Technologies
Model Number :
IPP65R110CFDA
Certification :
RoHS
Place of Origin :
United States
MOQ :
50 PCS
Price :
Negotiable
Payment Terms :
L/C, D/A, D/P, T/T
Supply Ability :
6K PCS
Delivery Time :
2-3 DAYS
Packaging Details :
50 PCS/Tube
Category :
Single FETs, MOSFETs
Mfr :
Infineon Technologies
Series :
Automotive, AEC-Q101, CoolMOS™
Product Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs :
118 nC @ 10 V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3240 pF @ 100 V
Power Dissipation (Max) :
277.8W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220-3
Description

IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3

Features:IPP65R110CFDA

Category Single FETs, MOSFETs
Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25ﾂｰC 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V
Power Dissipation (Max) 277.8W (Tc)
Operating Temperature -40°C~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP65R110

Additional Resources

ATTRIBUTE DESCRIPTION
Other Names IPP65R110CFDAAKSA1-ND
448-IPP65R110CFDAAKSA1
SP000895234
Standard Package 50

Data Picture:https://www.infineon.com/dgdl/Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5

IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3










±
Product tags

2n3773 dc switching circuit

,

ATF20V8B-10JC

,

mosfet stw20nm50fd
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IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3

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Product Detail
Brand Name :
Infineon Technologies
Model Number :
IPP65R110CFDA
Certification :
RoHS
Place of Origin :
United States
MOQ :
50 PCS
Price :
Negotiable
Contact Supplier
IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3

Shenzhen Zhaocun Electronics Co., Ltd.

Active Member
3 Years
shenzhen
Since 2012
Business Type :
Distributor/Wholesaler, Agent, Seller
Main Products :
Memory IC Chip, Sensor Chips, Power IC Chip
Total Annual :
1000000-5000000
Employee Number :
100~150
Certification Level :
Active Member
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