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RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W
RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W
Specifications
Brand Name :
ROHM
Model Number :
RGS80TSX2DHRC11
Certification :
RoHS
Place of Origin :
Japan
MOQ :
30 PCS
Price :
Negotiable
Payment Terms :
L/C, D/A, D/P, T/T
Supply Ability :
6K PCS
Delivery Time :
2-3 DAYS
Packaging Details :
30 PCS/Tube
Category :
Single IGBTs
Mfr :
Rohm Semiconductor
Package :
Tube
IGBT Type :
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Current - Collector (Ic) (Max) :
80 A
Current - Collector Pulsed (Icm) :
120 A
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 40A
Power - Max :
555 W
Input Type :
Standard
Gate Charge :
104 nC
Test Condition :
600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) :
198 ns
Operating Temperature :
-40°C ~ 175°C
Mounting Type :
Through Hole
Supplier Device Package :
TO-247N
Description

RGS80TSX2DHRC11 IGBT Trench Field Stop 1200 V 80 A 555 W Through Hole TO-247N

Features:

●Low Collector - Emitter Saturation Voltage

●Short Circuit Withstand Time 10μs

●Qualified to AEC-Q101

●Built in Very Fast & Soft Recovery FRD

●Pb - free Lead Plating ; RoHS Compliant

Description:

RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101 rated automotive IGBTs that

are available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that contributes

to reducing the size and improving the efficiency of applications. The RGS IGBTs utilize original trench-gate and

thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (VCE(sat)) with

reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current

applications.

Quick Detail:

Manufacturer
Rohm Semiconductor
Manufacturer Product Number
RGS80TSX2DHRC11
Description
IGBT TRENCH FLD 1200V 80A TO247N
Detailed Description
IGBT Trench Field Stop 1200 V 80 A 555 W Through Hole TO-247N

Product Attributes:

TYPE
DESCRIPTION
Category
Single IGBTs
Mfr
Rohm Semiconductor
Product Status
Active
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
80 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
Power - Max
555 W
Switching Energy
3mJ (on), 3.1mJ (off)
Input Type
Standard
Gate Charge
104 nC
Td (on/off) @ 25°C
49ns/199ns
Test Condition
600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)
198 ns
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247N
Base Product Number
RGS80

Additional Resources:

ATTRIBUTE DESCRIPTION
Other Names 846-RGS80TSX2DHRC11
Standard Package 30

Data Picture:https://fscdn.rohm.com/en/products/databook/datasheet/discrete/igbt/rgs80tsx2dhr-e.pdf

RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W

RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W

Product tags

athmed diode 808nm

,

1n5400 diode spec

,

zener diode numbers
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RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W

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Product Detail
Brand Name :
ROHM
Model Number :
RGS80TSX2DHRC11
Certification :
RoHS
Place of Origin :
Japan
MOQ :
30 PCS
Price :
Negotiable
Contact Supplier
RGS80TSX2DHRC11 TO-247N ROHM Semiconductor IGBT Trench Field Stop 1200 V 80 A 555 W

Shenzhen Zhaocun Electronics Co., Ltd.

Active Member
3 Years
shenzhen
Since 2012
Business Type :
Distributor/Wholesaler, Agent, Seller
Main Products :
Memory IC Chip, Sensor Chips, Power IC Chip
Total Annual :
1000000-5000000
Employee Number :
100~150
Certification Level :
Active Member
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