Part Status | Active |
---|---|
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 444A (Tc) |
Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 400A, 20V |
Vgs(th) (Max) @ Id | 4V @ 105mA |
Gate Charge (Qg) (Max) @ Vgs | 1127nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 3000W |
Operating Temperature | 175°C (TJ) |
Mounting Type | - |
Package / Case | Module |
Supplier Device Package | Module |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |