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FF300R12KT4 IGBT Modules IGBT 1200V 300A
FF300R12KT4 IGBT Modules IGBT 1200V 300A
Specifications
Brand Name :
Infineon
Model Number :
FF300R12KT4
MOQ :
10
Price :
Negotiabie
Payment Terms :
T/T
Packaging Details :
Carton packging
Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
1.75 V
Continuous Collector Current at 25 C :
450 A
Gate-Emitter Leakage Current :
400 nA
Pd - Power Dissipation :
1600 W
Package / Case :
62 mm
Description
Product Attribute Attribute Value
Infineon
Product Category: IGBT Modules
RoHS: Details
IGBT Silicon Modules
Dual
1200 V
1.75 V
450 A
400 nA
1600 W
62 mm
- 40 C
+ 150 C
Tray
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
Series: Trench/Fieldstop IGBT4 - T4
10
Product tags

semiconductor igbt module mitsubishi

,

igbt 1200v

,

high power igbt module
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FF300R12KT4 IGBT Modules IGBT 1200V 300A

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Product Detail
Brand Name :
Infineon
Model Number :
FF300R12KT4
MOQ :
10
Price :
Negotiabie
Payment Terms :
T/T
Packaging Details :
Carton packging
Contact Supplier
FF300R12KT4 IGBT Modules IGBT 1200V 300A

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Active Member
3 Years
Since 2017
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Microcontroller IC, Integrated Circuit IC Chip, Flash Memory IC Chip
Total Annual :
15000000-20000000
Employee Number :
10~20
Certification Level :
Active Member
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