BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance
BSC011N03LSI Mosfet TDSON-8 With High Current And Low Internal Resistance
Product Attribute | Attribute Value | Search Similar |
---|---|---|
Infineon | ||
MOSFET | ||
RoHS: | Details | |
Si | ||
SMD/SMT | ||
TDSON-8 | ||
N-Channel | ||
1 Channel | ||
30 V | ||
230 A | ||
1.1 mOhms | ||
- 20 V, + 20 V | ||
2 V | ||
68 nC | ||
- 55 C | ||
+ 150 C | ||
96 W | ||
Enhancement | ||
OptiMOS | ||
Reel | ||
Cut Tape | ||
MouseReel | ||
Brand: | Infineon Technologies | |
Configuration: | Single | |
Fall Time: | 6.2 ns | |
Forward Transconductance - Min: | 80 S | |
Height: | 1.27 mm | |
Length: | 5.9 mm | |
Product Type: | MOSFET | |
Rise Time: | 9.2 ns | |
5000 | ||
Subcategory: | MOSFETs | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 35 ns | |
Typical Turn-On Delay Time: | 6.4 ns | |
Width: | 5.15 mm | |
Part # Aliases: | BSC11N3LSIXT SP000884574 BSC011N03LSIATMA1 | |
Unit Weight: | 0.003683 oz |