Specifications
Brand Name :
INFINEON
Model Number :
BSC011N03LSI
Place of Origin :
INFINEON
MOQ :
1
Price :
Can discuss
Payment Terms :
T/T
Supply Ability :
3000
Packaging Details :
The cartons
Mounting Style :
SMD/SMT
Package / Case :
TDSON-8
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Id - Continuous Drain Current :
230 A
Rds On - Drain-Source Resistance :
1.1 mOhms
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Description

BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance

BSC011N03LSI Mosfet TDSON-8 With High Current And Low Internal Resistance

Product Attribute Attribute Value Search Similar
Infineon
MOSFET
RoHS: Details
Si
SMD/SMT
TDSON-8
N-Channel
1 Channel
30 V
230 A
1.1 mOhms
- 20 V, + 20 V
2 V
68 nC
- 55 C
+ 150 C
96 W
Enhancement
OptiMOS
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 6.2 ns
Forward Transconductance - Min: 80 S
Height: 1.27 mm
Length: 5.9 mm
Product Type: MOSFET
Rise Time: 9.2 ns
5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 6.4 ns
Width: 5.15 mm
Part # Aliases: BSC11N3LSIXT SP000884574 BSC011N03LSIATMA1
Unit Weight: 0.003683 oz
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BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance

Ask Latest Price
Brand Name :
INFINEON
Model Number :
BSC011N03LSI
Place of Origin :
INFINEON
MOQ :
1
Price :
Can discuss
Payment Terms :
T/T
Contact Supplier
BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Active Member
3 Years
Since 2017
Business Type :
Distributor/Wholesaler, Trading Company
Total Annual :
15000000-20000000
Employee Number :
10~20
Certification Level :
Active Member
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