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GaAs Infrared LED Micro Photo Sensor , Photoelectric Proximity Sensor Plastic Material
GaAs Infrared LED Micro Photo Sensor , Photoelectric Proximity Sensor Plastic Material
Specifications
Brand Name :
DASS
Model Number :
DS-ES
Certification :
CE
Place of Origin :
CHINA
MOQ :
1000 PCS
Price :
USD4-6/PC
Payment Terms :
T/T
Supply Ability :
30000 PCS ONE MONTHS
Delivery Time :
7 DAYS
Packaging Details :
CARTON
Photoelectric Sensor :
Anti-light interference
U-type Photoelectric Sensor :
Inspection Frequency>2KHZ
Photoelectric Slot Sensor :
Anti-power interference
Service Environment :
Ability to adapt to environmental pollution
Weight :
29g
Color :
Black
Description

U-shaped Photoelectric Sensor /U-type Photoelectric Sensor/Photoelectric Slot Sensor

Photomicrosensor with built-in amplifier and attached cable reduces external light interference.
• Light modulation effectively reduces external light interference.
• Wide operation voltage range: 5 to 24 VDC
• For the most recent information on models that have been certified for safety standards,Easy operation monitoring with bright light indicator.

• Easy operation monitoring with bright light indicator.

Model

NPN

 DS-ES61P DS-ES62 DS-ES63 DS-ES64
PNP DS-ES61P DS-ES62P DS-ES63P DS-ES64P
Sensing distance
(slot width)		 5mm(slot width)
Sensing object Opaque: 2 × 0.8 mm min.
Differential distance 0.025mm
Light source GaAs infrared LED (pulse lighting) with a peak wavelength of 940 nm 　 　 　
output way N=NPN.NO.NC P=PNP.NO.NC
voltage 5 to 24 VDC ±10%, ripple (p-p): 10% max.
Current consumption Average: 35 mA max(NPN).; Peak: 30 mA max.(PNP)　　　
Ambient illumination 1,000 lx max. with incandescent light on the surface of the receiver　　　
Ambient temperature range Operating: −25 to +55°C
Storage: −30 to +80°C
Ambient humidity range Operating: 5% to 85%
Storage: 5% to 95%
Vibration resistance Destruction: 20 to 2000 Hz,
1.5-mm double amplitude for 2 h each in X, Y, and Z directions
Shock resistance Destruction: 500 m/s2 for 3 times
each in X, Y, and Z directions
Degree of protection IEC IP50
Connecting method Pre-wired (standard cable length: 1 m)
Response frequency 1 KHZ min(Average 3 KHZ)
Weight 29g
Control output NPN voltage output:
Load power supply voltage: 5 to 24 VDC
Load current: 100 mA max.
OFF current: 0.8 mA max.
100 mA load current with a residual voltage of 0.8 V max.
40 mA load current with a residual voltage of 0.4 V max, PNP voltage output:
Load power supply voltage: 5 to 24 VDC
Load current: 50 mA max.
OFF current: 1.3 mA max.
50 mA load current with a residual voltage of 1.3 V max
Material Shell material:PBT/ABS
Pervious to light part:PC

GaAs Infrared LED Micro Photo Sensor , Photoelectric Proximity Sensor Plastic Material

Product tags

photoelectric sensors types

,

light sensing diode

,

photoelectric sensor types
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GaAs Infrared LED Micro Photo Sensor , Photoelectric Proximity Sensor Plastic Material

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Product Detail
Brand Name :
DASS
Model Number :
DS-ES
Certification :
CE
Place of Origin :
CHINA
MOQ :
1000 PCS
Price :
USD4-6/PC
Contact Supplier
GaAs Infrared LED Micro Photo Sensor , Photoelectric Proximity Sensor Plastic Material

QINGDAO DASS SENSOR TECHNOLOGY CO.,LTD.

Active Member
7 Years
shandong, qingdao
Since 2015
Business Type :
Manufacturer
Main Products :
Micro Photoelectric Sensor, U Shaped Photoelectric Sensor, U Type Photoelectric Sensor
Total Annual :
1 000 000-1 500 000
Employee Number :
30~50
Certification Level :
Active Member
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