Chemical Properties And Applications Of Molybdenum Target
1.Chemical Properties Of Molybdenum Target:
The chemical properties of molybdenum targets are relatively stable. At room temperature, it is stable in air or water, but slight oxidation occurs when the temperature reaches 400 °C, and violent oxidation occurs when the temperature reaches 600 °C to form MoO3. Hydrochloric acid, hydrofluoric acid, dilute nitric acid and alkaline solutions do not react with the target, but they can be dissolved in nitric acid, aqua regia or hot sulfuric acid solutions.
Medium | Experimental conditions | Reaction |
Water | Does not corrode | |
HF | Cold,Hot | Does not corrode |
HF+H2SO4 | Cold | Does not corrode |
Hot | slight corrosion | |
HF+Aqua regia | Cold | slight corrosion |
Hot | Corrosion rapidly | |
HF+HNO3 | Cold,Hot | Corrosion rapidly |
Ammonia | Does not corrode | |
Molten alkali | In the atmosphere | slight corrosion |
Oxidizing agents such asKNO3/KNO/Kcl3/PbO2 | Corrosion rapidly | |
Boron | at high temperature | generate borides |
C | Above 1100℃ | form carbide |
Si | Above 1100℃ | generate silicide |
P | to maximum temperature | Does not corrode |
S | Above 440℃ | form sulfide |
iodine | Above 790℃ | Does not corrode |
Bromine | Above 840℃ | Does not corrode |
Chlorine | Above 230℃ | strong corrosion |
Fluorine | Room temperature | strong corrosion |
Air and oxygen | 400℃ | start to oxidize |
600℃ | strong oxidation | |
Above 700℃ | MoO3sublimation | |
Hydrogen and noble gases | to maximum temperature | not responding |
CO | Above 1400℃ | form carbide |
CO2 | 1200℃ | oxidation |
Hydrocarbons | 1100℃ | form carbide |
Al,Ni,Fe,Co,Sb | melt | strong corrosion |
Zn | melt | slight corrosion |
Bi | melt | Highly corrosive |
Glass | melt | Highly corrosive |
Refractory oxideAl2O3,ZrO2,BeO,MgO,ThO2 | 1700℃ | Does not corrode |
2. Applictaion Of Molybdenum Target:
1.)The use of molybdenum sputtering targets on flat panel displays.
In the electronics industry, the use of molybdenum sputtering targets mainly includes flat panel displays, thin-film solar cell electrodes and wiring materials, and semiconductor barrier materials. These materials are based on molybdenum and have a high melting point, high electrical conductivity, low specific impedance, good resistance to Corrosive and good environmental performance. Molybdenum has the advantages of only half the specific resistance and film stress of chromium, and has no environmental pollution problems, so it has become one of the preferred materials for sputtering targets for flat panel displays. In addition to this, the use of molybdenum in the components of liquid crystal displays can greatly improve the performance of liquid crystal displays in terms of brightness, contrast, color and longevity.
In the flat panel display business, TFT-LCDs are one of the primary commercial applications for molybdenum sputtering targets. According to market research, LCD development will reach its peak in the coming years, with an average annual growth rate of roughly 30%. With the advancement of LCD, the demand for LCD sputtering targets will also rise quickly, at a rate of roughly 20% every year.
2.)Application of Molybdenum Sputtering Target in Thin Film Solar Photovoltaic Cells.
In addition to the flat panel display industry, with the development of the new energy industry, the use of molybdenum sputtering targets on thin-film solar photovoltaic cells is also increasing.
CIGS solar cells are a crucial kind of solar cell that are used to turn sunlight into electricity. Four elements make up CIGS: selenium (Se), gallium (Ga), indium (In), and copper (Cu) (Se).Its full name is copper indium gallium selenide thin film solar cells. Strong light absorption, good power generation stability, high conversion efficiency, long daytime power generation times, huge power generation, low production costs, and other benefits are all associated with CIGS.and short energy recovery period.
The molybdenum target is mainly formed by sputtering to form the electrode layer of the CIGS thin film battery. Molybdenum is located at the solar cell's base. The nucleation, development, and shape of CIGS thin film crystals are significantly influenced by this contact, which serves as the rear contact of solar cells.
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