High Voltage MOSFET for Half Bridge/Full Bridge Circuit Applications Embedded FRD Technology
High Voltage MOSFET is a new lateral variable doping technology power MOSFET designed for motor series, inverter, half bridge/full bridge circuit applications, etc. It has excellent characteristics in high temperature and provides extremely low on-resistance. This type of MOSFET is designed with special power MOS structure with high voltage capability that is capable of handling high voltage conditions and providing reliable performance. It is a reliable and efficient power device with superior performance and high temperature resistance that is ideal for high voltage applications.
High Voltage MOSFET is a reliable and efficient power device that delivers superior performance in high temperature conditions. It is suitable for a wide range of applications requiring high voltage, such as motor series, inverter, half bridge/full bridge circuit applications, etc. Its lateral variable doping technology ensures low on-resistance and excellent characteristics in high temperature.
High voltage power MOSFET is the ideal choice for applications requiring high voltage and high temperature resistance. It is designed with a special power MOS structure and uses lateral variable doping technology to provide low on-resistance and excellent characteristics in high temperature. This type of MOSFET is perfect for motor series, inverter, half bridge/full bridge circuit applications, etc.
Product Name | High Voltage MOSFET |
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Type | N |
Technology | MOSFET |
Ultra-HV MOSFET Application | Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, Etc. |
HV Mosfet Application | LED Driver, Adaptors, Industrial Switching Power Supply, Inverters Etc |
Embedded FRD HV MOSFET Application | Motor Series, Inverter, Half Bridge/full Bridge Circuit Applications, Etc. |
Advantages | New Lateral Variable Doping Technology, Special Power MOS Structure, Excellent Characteristics In High-temperature. |
Heat Dissipation | Great Heat Dissipation |
Resistance | Low On-resistance |
Leakage | Low Leakage Can Reach Less Than 1 µ A |
REASUNOS High Voltage MOSFET, high voltage power mosfet, and High Voltage MOS-Gate Transistor, are produced in Guangdong, CN. Each product has a dustproof, waterproof, and anti-static packaging, and is placed inside a cardboard box in cartons. Delivery time is 2-30 days depending on the total quantity, and payment terms are 100% T/T in advance (EXW). The supply ability is 5KK/month. The type is N, and it is suitable for Smart Meter, Cabinet Power Supply, Industrial Switching Power Supply, Electrical Power System, etc. The advantages of the product are New Lateral Variable Doping Technology, Special Power MOS Structure, and Excellent Characteristics In High-temperature. It also has a low on-resistance.
High Voltage MOSFET Technical Support and Service
Our team of engineers is here to provide technical support and services for all your High Voltage MOSFET needs. We offer expert advice, troubleshooting, and repairs in a timely and efficient manner. Our team is available to answer any questions you have, provide assistance with product installation and maintenance, and help to ensure your product is running optimally.
We also offer a comprehensive warranty covering all our High Voltage MOSFET products. Our warranties provide protection from manufacturing defects and ensure that your product is operating correctly and safely. If you have any issues with your product, we are here to help. Our team of technicians is dedicated to providing you with the best possible customer service.
The High Voltage MOSFET will be packaged securely in an anti-static, shockproof box. The box will be labeled with the product name and warning signs. Careful measures will be taken to ensure that the MOSFET is not damaged during shipping.
The High Voltage MOSFET will be shipped via a reliable courier service. All orders will be tracked and insured. Once the order is shipped, customers will receive a notification with tracking information.