5G Base Station Low Voltage MOSFET with SGT Process Low Power Loss
Low Voltage MOSFET is a kind of power semiconductor device featuring low power loss and high EAS capability. It is usually used in low voltage applications and the trench process advantages enable it to have smaller RSP and freely combined and utilized both series and parallel configurations. The SGT process advantages further provide breakthrough FOM optimization and covering more application. With its low voltage fet characteristics, Low Voltage MOSFET is an ideal choice for efficient and reliable power control.
Product name | Low Voltage MOSFET |
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Structure process | Trench/SGT |
EAS capability | High EAS Capability |
SGT process Advantages | Breakthrough FOM Optimization, Covering More Application. |
SGT process Application | Motor Driver, 5G Base Station, Energy Storage, High-frequency Switch, Synchronous Rectification. |
Trench process Application | Wireless Charging, Fast Charging, Motor Driver, DC/DC Converter, High-frequency Switch, Synchronous Rectification. |
Power consumption | Low Power Loss |
Efficiency | High Efficiency And Reliable |
Trench process Advantages | Smaller RSP, Both Series And Parallel Configurations Can Be Freely Combined And Utilized. |
resistance | Low Rds(ON) |
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The Low Voltage MOSFET product should be packaged in an electrostatic discharge (ESD) bag and shipped in an anti-static box to protect against static electricity.