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N Type 1200V SiC Power Mosfet , Metal Oxide Silicon Field Effect Transistor
N Type 1200V SiC Power Mosfet , Metal Oxide Silicon Field Effect Transistor
Specifications
Brand Name :
REASUNOS
Place of Origin :
Guangdong, CN
MOQ :
600
Price :
Confirm price based on product
Packaging Details :
Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Delivery Time :
2-30 days (Depends on Total Quantity)
Payment Terms :
100% T/T in Advance(EXW)
Supply Ability :
5KK/month
Product name :
Silicon Carbide MOSFET
Efficiency :
High Efficiency
Resistance :
Low On Resistance
Material :
Silicon Carbide
Type :
N
Frequency :
High Frequency
Power :
High Power
Advantages :
Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
Description

Product Description:

Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (SiC MOSFET) is a high power, low on resistance, high frequency device with excellent switching performance. It is widely used in Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply and Charging Pile. This device uses the most advanced silicon carbide technology to greatly reduce conduction loss, switching loss and gate charge, making it the ideal choice for high-power, high-frequency applications. With its low on-resistance and high switching frequency, SiC MOSFET provides businesses and consumers with the highest power efficiency, reliability and long life-span.

SiC MOSFET features a unique three-dimensional structure, providing a high voltage tolerance of up to 1200V, a fast switching speed, and a wide operating temperature range. This makes it the perfect choice for a wide range of applications, from automotive to industrial, from consumer electronics to renewable energy. It also offers excellent thermal performance, with a low RDS(on) value and low gate charge. This provides businesses and consumers with the lowest possible operating costs and the highest levels of reliability.

SiC MOSFET is an ideal choice for a wide range of demanding applications, from automotive to industrial, from consumer electronics to renewable energy. With its high power, low on resistance, and high frequency, SiC MOSFET provides businesses and consumers with the highest power efficiency, reliability and long life-span.

Technical Parameters:

Parameters Values
Frequency High Frequency
Application Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc.
Efficiency High Efficiency
Power High Power
Advantages Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable
Resistance Low On Resistance
Device Type MOSFET
Material Silicon Carbide
Type N
Product name Silicon Carbide MOSFET
Keywords Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor, SiC MOSFETs, SiC Field Effect Transistor

Applications:

REASUNOS Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are perfect for high-efficiency, high-power applications. They are capable of handling high-voltage DC/DC converters, motor drivers, UPS power supplies, switching power supplies, and charging piles. With their high power and high efficiency, they are ideal for solar inverters, motor drivers, and other high-efficiency applications. Their MOSFET type is N, which is capable of handling more power and delivering higher efficiency. They are packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. Their minimum order quantity is 600, and their supply ability is 5KK/month. Their delivery time is 2-30 days, depending on the total quantity. Payment terms are 100% T/T in Advance(EXW), and the price is to be confirmed based on the product.

Support and Services:

Silicon Carbide MOSFET provides technical support and services to ensure a smooth transition and operation of the product. Technical support includes installation guidance, product application instructions, and troubleshooting. Service includes but not limited to online and telephone support, warranty support, and maintenance and repair services.

Packing and Shipping:

Silicon Carbide MOSFET Packaging and Shipping:

  • Product is packaged in a moisture-proof and static-proof container.
  • Product is then wrapped in a protective foam cushion.
  • Product is then placed in an insulated shipping box with sufficient cushioning material.
  • Product is then shipped by an insured carrier, such as FedEx or UPS.

FAQ:

Q&A

Q1: What is the brand name of Silicon Carbide MOSFET?
A1: The brand name is REASUNOS.

Q2: Where is the product sourced from?
A2: The product is sourced from Guangdong, China.

Q3: What is the minimum order quantity?
A3: The minimum order quantity is 600.

Q4: What is the price for the product?
A4: The price of the product will be confirmed based on the product.

Q5: What is the packaging for the product?
A5: The product is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.

Product tags

sic mosfet

,

sic mosfet ratings

,

silicon carbide mosfet
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N Type 1200V SiC Power Mosfet , Metal Oxide Silicon Field Effect Transistor

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Product Detail
Brand Name :
REASUNOS
Place of Origin :
Guangdong, CN
MOQ :
600
Price :
Confirm price based on product
Packaging Details :
Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.
Delivery Time :
2-30 days (Depends on Total Quantity)
Contact Supplier
N Type 1200V SiC Power Mosfet , Metal Oxide Silicon Field Effect Transistor

Reasunos Semiconductor Technology Co., Ltd.

Verified Supplier
2 Years
guangdong, dongguan
Since 2007
Business Type :
Manufacturer, Exporter
Main Products :
High Power MOSFET, Silicon Carbide MOSFET, Super Junction MOSFET
Total Annual :
10000000-50000000
Employee Number :
100~200
Certification Level :
Verified Supplier
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