Silicon Carbide (SiC) MOSFET is a high-frequency, high-efficiency Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based on Silicon Carbide material. This MOSFET has a wide working temperature range, low on-resistance, high-frequency operation, low gate charge and fast switching speed, making it ideal for use in power electronics applications. The Silicon Carbide MOSFET is designed to provide superior performance in terms of efficiency, frequency and power handling capability. It is capable of handling high power levels, withstanding high temperatures and providing very low power losses. The MOSFET is also capable of operating at high frequencies, and achieving high efficiency in a wide range of applications, making it an ideal choice for power electronics applications.
The Silicon Carbide MOSFET offers a unique combination of low on-resistance and high-frequency operation. This combination makes the Silicon Carbide MOSFET an ideal choice for high-power applications, and provides an excellent solution for high-power, high-frequency applications. The high-frequency operation of the MOSFET provides superior performance in terms of power efficiency and reliability, and the low on-resistance makes it an ideal choice for high-power applications. The low gate charge and fast switching speed make it an ideal choice for high-power, high-frequency applications.
Parameter | Details |
---|---|
Material | Silicon Carbide |
Type | N |
Power | High Power |
Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
Resistance | Low On Resistance |
Frequency | High Frequency |
Efficiency | High Efficiency |
Product name | Silicon Carbide MOSFET |
Device Type | MOSFET |
Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
Keywords | Silicon Carbide Field Effect Transistor, Metal-Oxide-Semiconductor Field Effect Transistor, Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor |
REASUNOS Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistors (SiC MOSFETs) are the perfect choice for high current, high voltage, and high temperature applications. These low on resistance, high efficiency SiC MOSFETs offer excellent thermal performance and excellent reliability. They are ideal for applications such as solar inverters, high-voltage DC/DC converters, motor drivers, UPS power supplies, switching power supplies, and charging piles.
REASUNOS offers a wide range of SiC MOSFET products in different types and sizes. They are available in a minimum order quantity of 600 and come in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The price of the product depends on the total quantity and delivery time is usually 2-30 days, depending on the order. Payment terms are 100% T/T in Advance (EXW). We have a supply ability of 5KK per month.
Silicon Carbide MOSFET products are supported by a wide range of technical services and support services.
The technical services and support available for Silicon Carbide MOSFET products include:
Silicon Carbide MOSFET packaging and shipping includes the following steps: