Metal Oxide Semiconductor Field Effect Transistor For UPS Power Supply
The Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is a type of N-channel device with a Silicon Carbide material. This device is designed for high frequency applications and offers excellent switching performance. The Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is an advanced power device that combines the high performance of Silicon Carbide technology with the low resistance of a Metal-Oxide-Semiconductor structure. It is ideal for applications where high frequency switching and low on-resistance are needed.
The Silicon Carbide MOSFET provides superior switching performance with low conduction losses and low gate charge. It is ideal for high frequency applications such as DC-DC converters, DC-AC inverters, and motor drivers. It has an excellent temperature stability and offers superior current handling capabilities. The Silicon Carbide MOSFET is a reliable and robust device suitable for a wide range of applications.
Product Name | Silicon Carbide MOSFET |
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Device Type | MOSFET |
Power | High Power |
Type | N |
Resistance | Low On Resistance |
Material | Silicon Carbide |
Advantages | Based on the national military standard production line, the process is stable and the quality is reliable. |
Frequency | High Frequency |
Efficiency | High Efficiency |
Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, etc. |
Keywords | SiC Metal-Oxide-Semiconductor, SiC Field Effect Transistor, MOSFET Based on Silicon Carbide |
Reasunos Silicon Carbide MOSFET is a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) that offers high power, low on resistance and high efficiency. It is based on the national military standard production line, guaranteeing a stable process and reliable quality. This product comes from Guangdong, China, with a minimum order quantity of 600 units. The price of the product is subject to confirmation based on the total quantity. The packaging is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. Delivery time is 2-30 days, depending on the total quantity. The payment terms are 100% T/T in advance (EXW). The supply ability is 5KK/month.
Silicon Carbide MOSFET provides support and services to ensure customers experience the highest quality of product performance.
Technical support and services for Silicon Carbide MOSFET include:
Silicon Carbide MOSFET Packaging and Shipping:
A1: Silicon Carbide MOSFET is a power semiconductor device made of Silicon Carbide. It is used in many applications, such as motor control, inverter, converter and power supply systems.
A2: The Brand Name of Silicon Carbide MOSFET is REASUNOS.
A3: The Place of Origin of Silicon Carbide MOSFET is Guangdong, China.
A4: The Minimum Order Quantity for Silicon Carbide MOSFET is 600 pieces.
A5: The Packaging Details for Silicon Carbide MOSFET is Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.