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MMBT4403 NPN High Speed Switching Transistor High Performance 
MMBT4403 NPN High Speed Switching Transistor High Performance 
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
MMBT4403
FEATURE :
Low Leakage
Power mosfet transistor :
SOT-23 Plastic-Encapsulate Transistors
Product ID :
MMBT4403
Type :
Switching Diodesod
Description

SOT-23 Plastic-Encapsulate Transistors MMBT4403 TRANSISTOR (NPN)

FEATURE

Switching Transistor

Marking :2T

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -600 mA
PC Collector Power Dissipation 300 mW
RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55～+150 ℃




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA ,IC=0 -5 V
Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 μA
Collector cut-off current ICEX VCE=-35V, VBE=0.4V -0.1 μA
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA

DC current gain

 hFE1 VCE=-1V, IC=-0.1mA 30
hFE2 VCE=-1V, IC=-1mA 60
hFE3 VCE=-1V, IC=-10mA 100
hFE4 VCE=-2V, IC=-150mA 100 300
hFE5 VCE=-2V, IC=-500mA 20

Collector-emitter saturation voltage

VCE(sat)

 IC=-150mA,IB=-15mA -0.4 V
IC=-500mA,IB=-50mA -0.75 V

Base-emitter saturation voltage

VBE(sat)

 IC=-150mA,IB=-15mA -0.95 V
IC=-500mA,IB=-50mA -1.3 V
Transition frequency fT VCE=-10V, IC=-20mA,f =100MHz 200 MHz
Delay time td

VCC=-30V, VBE(off)=-0.5V

IC=-150mA , IB1=-15mA

 15 ns
Rise time tr 20 ns
Storage time ts

VCC=-30V, IC=-150mA

IB1=IB2=-15mA

 225 ns
Fall time tf 60 ns






Typical Characterisitics
MMBT4403 NPN High Speed Switching Transistor High Performance 

MMBT4403 NPN High Speed Switching Transistor High Performance 

MMBT4403 NPN High Speed Switching Transistor High Performance 




Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ 0° 8° 0° 8°






Product tags

5401dm transistor

,

j13009 transistor equivalent

,

2a npn transistor
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MMBT4403 NPN High Speed Switching Transistor High Performance 

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
MMBT4403 NPN High Speed Switching Transistor High Performance 

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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