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FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
FMMT591
VCBO Collector-Base Voltage :
-80 V
Product Name :
Semiconductor Triode
Description

SOT-23 Plastic-Encapsulate Transistors FMMT591 TRANSISTOR (PNP)

FEATURE

Low equivalent on-resistance

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Marking :591

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

SymbolParameterValueUnit
VCBOCollector-Base Voltage-80V
VCEOCollector-Emitter Voltage-60V
VEBOEmitter-Base Voltage-5V
ICCollector Current-1A
ICMPeak Pulse Current-2A
PCCollector Power Dissipation250mW
RΘJAThermal Resistance From Junction To Ambient500℃/W
TjJunction Temperature150℃
TstgStorage Temperature-55～+150℃




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-100μA, IE=0-80 V
Collector-emitter breakdown voltageV(BR)CEO1IC=-10mA, IB=0-60 V
Emitter-base breakdown voltageV(BR)EBOIE=-100μA, IC=0-5 V
Collector cut-off currentICBOVCB=-60V, IE=0 -0.1μA
Emitter cut-off currentIEBOVEB=-4V, IC=0 -0.1μA



DC current gain

hFE(1)VCE=-5V, IC=-1mA100
hFE(2) 1VCE=-5V, IC=-500mA100 300
hFE(3) 1VCE=-5V, IC=-1A80
hFE(4) 1VCE=-5V, IC=-2A15

Collector-emitter saturation voltage

VCE(sat)1 1IC=-500mA, IB=-50mA -0.3V
VCE(sat)2 1IC=-1A, IB=-100mA -0.6V
Base-emitter saturation voltageVBE(sat) 1IC=-1A, IB=-100mA -1.2V
Base-emitter voltage

1

VBE

VCE=-5V, IC=-1A -1V
Transition frequencyfTVCE=-10V,IC=-50mA,,f=100MHz150 MHz
Collector output capacitanceCobVCB=-10V,f=1MHz 10pF



Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.



Typical Characterisitics

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated TransistorsFMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors





Package Outline Dimensions

SymbolDimensions In MillimetersDimensions In Inches
MinMaxMinMax
A0.9001.1500.0350.045
A10.0000.1000.0000.004
A20.9001.0500.0350.041
b0.3000.5000.0120.020
c0.0800.1500.0030.006
D2.8003.0000.1100.118
E1.2001.4000.0470.055
E12.2502.5500.0890.100
e0.950 TYP0.037 TYP
e11.8002.0000.0710.079
L0.550 REF0.022 REF
L10.3000.5000.0120.020
θ0°8°0°8°



FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors
FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors





























Product tags

inp semiconductor

,

ptfe encapsulated o-rings

,

npn silicon transistor
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FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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