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SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA
SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
MMBTA44
Junction Temperature :
150 ℃
Type :
Triode Transistor
Application :
mobile power supply/ led driver/motor control
Material :
Silicon
Collector Current :
600 mA
Storage Temperature :
-55～+150℃
Description

SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN)

FEATURE

Switching Transistor

Marking :2X

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 600 mA
PC Collector Power Dissipation 300 mW
RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55～+150 ℃




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA ,IC=0 6 V
Collector cut-off current ICBO VCB=50V,IE=0 0.1 μA
Collector cut-off current ICEX VCE=35V, VEB=0.4V 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA

DC current gain

 hFE1 VCE=1V, IC=0.1mA 20
hFE2 VCE=1V, IC=1mA 40
hFE3 VCE=1V, IC=10mA 80
hFE4 VCE=1V, IC=150mA 100 300
hFE5 VCE=2V, IC=500mA 40

Collector-emitter saturation voltage

VCE(sat)

 IC=150mA,IB=15mA 0.4 V
IC=500mA,IB=50mA 0.75 V

Base-emitter saturation voltage

VBE(sat)

 IC=150mA,IB=15mA 0.95 V
IC=500mA,IB=50mA 1.2 V
Transition frequency fT VCE=10V, IC=20mA,f =100MHz 250 MHz
Delay time td

VCC=30V, VBE(off)=-2V

IC=150mA , IB1=15mA

 15 ns
Rise time tr 20 ns
Storage time ts

VCC=30V, IC=150mA

IB1=IB2=15mA

 225 ns
Fall time tf 60 ns



Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.



Typical Characterisitics

SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA




Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ 0° 8° 0° 8°



SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA
SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA
SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA



Product tags

a7 smd transistor

,

igbt semiconductor

,

power transistor datasheet
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SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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