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A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors
A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors
A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors
A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
A733
VCBO :
-60V
VCEO :
-50V
VEBO :
-5V
Product name :
silicon semiconductor triode type
Tj :
150Š
Type :
Triode Transistor
Description

TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP)

FEATURE

Power dissipation

MARKING

  • A733=Device code
  • Solid dot=Green molding compound device, if none,the normal device
  • Z=Rank of hFE
  • XXX=Code

A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
A733 TO-92 Bulk 1000pcs/Bag
A733-TA TO-92 Tape 2000pcs/Box


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
I C Collector Current -Continuous -100 mA
PC Collector Power Dissipation 250 mW
TJ Junction Temperature 150 ℃
Tstg Junction and Storage Temperature -55~+150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -50uA,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE= -50uA, IC=0 -5 V
Collector cut-off current ICBO VCB= -60V, IE=0 -0.1 uA
Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 uA
DC current gain hFE VCE= -6V, IC= -1mA 90 200 600
Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10mA -0.18 -0.3 V
Base-emitter voltage VBE VCE=-6V,IC=-1.0mA -0.58 -0.62 -0.68 V
Transition frequency fT VCE=-6V,IC=-10mA 100 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHZ 6 pF

Noise figure

NF

VCE=-6V,IC=-0.3mA,

Rg=10kΩ,f=100HZ

20

dB


CLASSIFICATION OF hFE(2)

Rank R Q P K
Range 90-180 135-270 200-400 300-600

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0 1.600 0.063
h 0.000 0.380 0.000 0.015



Product tags

ptfe encapsulated o-rings

,

pnp mosfet

,

p type mosfet
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A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors
A733 PNP Tip Power Transistors TO-92 Plastic - Encapsulate Transistors

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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