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B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit
B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
B772
Collector Power Dissipation :
1.25W
VCEO :
-30V
VEBO :
-6V
Product name :
semiconductor triode type
Tj :
150℃
Type :
Triode Transistor
Description

TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP)

FEATURE


Low Speed Switching

MARKING

B772=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
B772 TO-126 Bulk 200pcs/Bag
B772-TU TO-126 Tube 60pcs/Tube


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 1.25 W
RӨJA Thermal Resistance from Junction to Ambient 100 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -6 V
Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA
Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA
Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA
DC current gain hFE VCE= -2V, IC= -1A 60 400
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V

Transition frequency

 fT

VCE= -5V, IC=-0.1A

f =10MHz

50

80

MHz


CLASSIFICATION OF hFE(2)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400


Typical Characteristics

B772 High Power PNP Transistor Switch , Tip PNP Transistor CircuitB772 High Power PNP Transistor Switch , Tip PNP Transistor CircuitB772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0 1.600 0.063
h 0.000 0.380 0.000 0.015

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit



Product tags

pnp transistor switch

,

pnp transistor as switch

,

pnp switching transistor
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B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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