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B772 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150
B772 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
B772
Collector Current -Continuous :
3A
VCEO :
30V
VCBO :
40V
Product name :
semiconductor triode type
Tj :
150℃
Type :
Triode Transistor
Description

TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)

FEATURE

Power Dissipation

MARKING

D882=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

B772 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
D882 TO-126 Bulk 200pcs/Bag
D882-TU TO-126 Tube 60pcs/Tube


MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1.25 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V
Collector cut-off current ICBO VCB= 40 V, IE=0 1 µA
Collector cut-off current ICEO VCE= 30 V, IB=0 10 µA
Emitter cut-off current IEBO VEB= 6 V, IC=0 1 µA
DC current gain hFE VCE= 2 V, IC= 1A 60 400
Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V
Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V

Transition frequency

fT

VCE= 5V, IC=0.1A

f =10MHz

90

MHz


CLASSIFICATION OF hFE(2)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400


Typical Characteristics

B772 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150B772 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150B772 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150B772 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059
b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054
c 0.450 0.600 0.018 0.024
D 7.400 7.800 0.291 0.307
E 10.600 11.000 0.417 0.433
e 2.290 TYP 0.090 TYP
e1 4.480 4.680 0.176 0.184
h 0.000 0.300 0.000 0.012
L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091
P 3.900 4.100 0.154 0.161
Φ 3.000 3.200 0.118 0.126

B772 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150



Product tags

electronic ic datasheet

,

mosfet datasheet

,

datasheet mosfet
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B772 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
B772 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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