MachineU > China Products > Electrical Equipment & Supplies
HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v
HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
HXY4616
Product name :
Mosfet Power Transistor
Type :
mosfet transistor
Product ID :
HXY4616
VDS :
40V
Features :
Surface mount package
VGS :
±20v
Description

HXY4616 30V Complementary MOSFET

Description

The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low Input Voltage inverter applications.

HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

N-Channel Electrical Characteristics (T=25°C unless otherwise noted)
HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

A. The value of RθJA is measured with the device mounted on 1in A =25°C. The value in any given application depends on the user's specific board design.2 FR-4 board with 2oz. Copper, in a still air environment with T

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20vHXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20vHXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20vHXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20vHXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20vHXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20vHXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v
Product tags

in5408 diode equivalent

,

p55nfo power mosfet

,

in5408 diode
Send your message to this supplier
Send Now

HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

Ask Latest Price
Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Mosfet Power Transistor
MachineU China Products Electrical Equipment & Supplies
Contact Supplier
Submit Requirement