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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
8H02ETS
Product name :
Mosfet Power Transistor
VDSS :
6.0 A
APPLICATION :
Power Management
FEATURE :
Low Gate Charge
Power mosfet transistor :
SOT-23-6L Plastic-Encapsulate
Description

20V N+N-Channel Enhancement Mode MOSFET

DESCRIPTION

The 8H02ETSuses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V.

GENERAL FEATURES

VDS = 20V,ID = 7A

8H02TS RDS(ON) < 28mΩ @ VGS=2.5V

RDS(ON) < 26mΩ @ VGS=3.1V

RDS(ON) < 22mΩ @ VGS=4V

RDS(ON) < 20mΩ @ VGS=4.5V

ESD Rating:2000V HBM

Application

Battery protection

Load switch Power management

8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

Package Marking and Ordering Information

Product ID Pack Marking Qty(PCS)
8H02ETS TSSOP-8 8H02ETS WW YYYY 5000/3000

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Drain Current-Continuous@ Current-Pulsed (Note 1) ID 7 V
Maximum Power Dissipation PD 1.5 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
Product tags

n channel power mosfet

,

mosfet power module

,

p channel power mosfet
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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