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TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors
TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
TIP127
Type :
Semiconductor Triode
Power Mosfet Transistor :
TO-126 Plastic Encapsulated
Product ID :
TIP122 TIP127
Feature :
High DC Current Gain
Collector Power Dissipation :
1.25w
Junction Temperature :
150℃
Description

TO-126 Plastic-Encapsulate Transistors

TIP122 Darlington Transistor (NPN)

TIP127 Darlington Transistor (PNP)

FEATURE
Medium Power Complementary Silicon Transistors
TO-126

1. EMITTER

2. COLLECTOR

3. BASE

MARKING

TIP122 , TIP127=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Equivalent Circuit

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
TIP122 TO-126 Bulk 200pcs/Bag
TIP127 TO-126 Bulk 200pcs/Bag
TIP122-TU TO-126 Tube 60pcs/Tube
TIP127-TU TO-126 Tube 60pcs/Tube

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter TIP122 TIP127 Unit
VCBO Collector-Base Voltage 100 -100 V
VCEO Collector-Emitter Voltage 100 -100 V
VEBO Emitter-Base Voltage 5 -5 V
IC Collector Current -Continuous 5 -5 A
PC * Collector Power Dissipation 1.25 W
RθJA Thermal Resistance Junction to Ambient 100 ℃/W
RθJc Thermal Resistance Junction to Case 8.33 ℃/W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

TIP122 NPN
Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 100 V
Collector-emitter breakdown voltage VCEO(SUS) IC=30mA,IB=0 100 V
Collector cut-off current ICBO VCB=100V, IE=0 0.2 mA
Collector cut-off current ICEO VCE=50 V, IB=0 0.5 mA
Emitter cut-off current IEBO VEB=5 V, IC=0 2 mA

DC current gain

 hFE(1) VCE= 3V, IC=0.5A 1000
hFE(2) VCE= 3V, IC=3 A 1000 12000

Collector-emitter saturation voltage

VCE(sat)

 IC=3A,IB=12mA 2

V
IC=5 A,IB=20mA 4
Base-emitter voltage VBE VCE=3V, IC=3 A 2.5 V
Output Capacitance Cob VCB=10V, IE=0,f=0.1MHz 200 pF

TIP127 PNP
Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100 V
Collector-emitter breakdown voltage VCEO(SUS) IC=-30mA,IB=0 -100 V
Collector cut-off current ICBO VCB=-100V, IE=0 -0.2 mA
Collector cut-off current ICEO VCE=-50 V, IB=0 -0.5 mA
Emitter cut-off current IEBO VEB=-5 V, IC=0 -2 mA

DC current gain

 hFE(1) VCE=-3V, IC=-0.5A 1000
hFE(2) VCE=-3V, IC=-3A 1000 12000

Collector-emitter saturation voltage

VCE(sat)

 IC=-3A,IB=-12mA -2

V
IC=-5 A,IB=-20mA -4
Base-emitter voltage VBE VCE=-3V, IC=-3 A -2.5 V
Output Capacitance Cob VCB=-10V, IE=0,f=0.1MHz 300 pF

* This test is performed with no heat sink at Ta=25℃.

Typical Characteristics

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors


TO-126 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059
b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054
c 0.450 0.600 0.018 0.024
D 7.400 7.800 0.291 0.307
E 10.600 11.000 0.417 0.433
e 2.290 TYP 0.090 TYP
e1 4.480 4.680 0.176 0.184
h 0.000 0.300 0.000 0.012
L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091
P 3.900 4.100 0.154 0.161
Φ 3.000 3.200 0.118 0.126

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Product tags

ptfe encapsulated o-rings

,

sot223 mosfet

,

p type mosfet
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TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

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Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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