Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch

General Description:

Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names.

General Features

VDS = 20V,ID = 7A
RDS(ON) < 28mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 22mΩ @ VGS=4V
RDS(ON) < 20mΩ @ VGS=4.5V
ESD Rating:2000V HBM

Application

Battery protection
Load switch Power management

Package Marking and Ordering Information

ABSOLUTE MAXIMUM RATINGS(TA=25 ℃unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA=25 ℃unless otherwise noted)

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

Attention

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

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