Specifications
Brand Name :
Hua Xuan Yang
Model Number :
AP30N10P
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
Negotiation
Price :
Negotiated
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Product name :
Mosfet Power Transistor
Model :
AP30N10P
Pack :
TO-220-3L
Marking :
AP30P10P XXX YYYY
VDSDrain-Source Voltage :
100V
VGSGate-Sou rce Voltage :
±20V
Description

AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

Mosfet Power Transistor Description:

The AP30N10P uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.

Mosfet Power Transistor Features

VDS = 100V ID = 30 A
RDS(ON) < 40mΩ @ VGS=10V

Mosfet Power Transistor Application

Battery protection
Load switch
Uninterruptible power supply

Package Marking and Ordering Information

Product ID Pack Marking Qty(PCS)
AP30P10P TO-220-3L AP30P10P XXX YYYY 1000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol Parameter Rating Units
VDS Drain-Source Voltage 100 V
VGS Gate-Sou rce Voltage ±20 V
ID@TC=25℃ Continuous Drain Current, V GS @ 10V 1 30 A
ID@TC=100 ℃ Continuous Drain Current, V GS @ 10V 1 26 A
IDM Pulsed Drain Current2 72 A
EAS Single Pulse Avalanche Energy 3 126 mJ
IAS Avalanche Current 13 A
PD@TC=25 ℃ Total Power Dissipation4 125 W
TSTG Storage Temperature Range -55 to 175
TJ Operating Junction Temperature Range -55 to 175
RθJA Thermal Resistance Junction-ambient 1 62 ℃/W
RθJC Thermal Resistance Junction-Case 1 1.2 ℃/W

Electrical Characteristics (TJ=25, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.098 --- V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , I D=16A --- 36 40

VGS=4.5V , I D=10A --- --- 50
VGS(th) Gate Threshold Voltage 1.5 --- 2.5 V
△VGS(th) VGS(th) Temperature Coefficient --- -5.52 --- mV/℃

IDSS

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25 ℃ --- --- 10

uA

VDS=80V , VGS=0V , TJ=55 ℃ --- --- 100
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=16A --- 30 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.6 ---
Qg Total Gate Charge (10V) --- 45.6 ---
Qgs Gate-Source Charge --- 6.7 ---
Qgd Gate-Drain Charge --- 11.8 ---
Td(on) Turn-On Delay Time

VDD=50V , VGS=10V ,

RG=3.3

ID=10A

--- 12 ---

ns

Tr
Td(off) Turn-Off Delay Time --- 42 ---
Tf Fall Time --- 13.4 ---
Ciss Input Capacitance --- 2270 ---
Coss Output Capacitance --- 130 ---
Crss Reverse Transfer Capacitance --- 90 ---
IS Continuous Source Current 1,5 VG=VD=0V , Force Current --- --- 36 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 ℃ --- --- 1.2 V
trr Reverse Recovery Time

IF=16A , dI/dt=100A/µs ,

TJ=25 ℃

--- 33 --- nS
Qrr Reverse Recovery Charge --- 28 --- nC
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.098 --- V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , I D=16A --- 36 40

VGS=4.5V , I D=10A --- --- 50
VGS(th) Gate Threshold Voltage 1.5 --- 2.5 V
△VGS(th) VGS(th) Temperature Coefficient --- -5.52 --- mV/℃

IDSS

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25 ℃ --- --- 10

uA

VDS=80V , VGS=0V , TJ=55 ℃ --- --- 100
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=16A --- 30 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.6 ---
Qg Total Gate Charge (10V) --- 45.6 ---
Qgs Gate-Source Charge --- 6.7 ---
Qgd Gate-Drain Charge --- 11.8 ---
Td(on) Turn-On Delay Time

VDD=50V , VGS=10V ,

RG=3.3

ID=10A

--- 12 ---

ns

Tr
Td(off) Turn-Off Delay Time --- 42 ---
Tf Fall Time --- 13.4 ---
Ciss Input Capacitance --- 2270 ---
Coss Output Capacitance --- 130 ---
Crss Reverse Transfer Capacitance --- 90 ---
IS Continuous Source Current 1,5 VG=VD=0V , Force Current --- --- 36 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 ℃ --- --- 1.2 V
trr Reverse Recovery Time

IF=16A , dI/dt=100A/µs ,

TJ=25 ℃

--- 33 --- nS
Qrr Reverse Recovery Charge --- 28 --- nC

Attention

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

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AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

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Brand Name :
Hua Xuan Yang
Model Number :
AP30N10P
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
Negotiation
Price :
Negotiated
Contact Supplier
AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220
AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220
AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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