Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V

Mosfet Power Transistor Description:

The AP50N10P uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.

Mosfet Power Transistor Features

VDS = 100V ID =50 A
RDS(ON) < 22mΩ @ VGS=10V

Package Marking and Ordering Information

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Electrical Characteristics (T J=25℃, unless otherwise noted)

3.The EAS data shows Max. rating . The test condition is VDS=25V,VGS=10V,L=0.1mH,IAS =41A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as IDand IDM, in real applications , should be limited by total power dissipation.

Attention

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

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