Specifications
Brand Name :
Hua Xuan Yang
Model Number :
AP8205S
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
Negotiation
Price :
Negotiated
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Product name :
Mosfet Power Transistor
Model :
AP8205S
Pack :
SOT23-6
Marking :
8205S
VDSDrain-Source Voltage :
20V
VGSGate-Sou rce Voltage :
±12V
Description

Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed

Mosfet Power Transistor Description:

The AP8205S uses advanced trench technology
to provide excellent RDS(ON), low gate charge
and operation with gate voltages as low as 2.5V.
This device is suitable for use as a Battery
protection or in other Switching application.

Mosfet Power Transistor Features

VDS = 20V,ID = 6A
RDS(ON) < 20.5.mΩ @ VGS=4.5V
RDS(ON) < 27.mΩ @ VGS=2.5V

Mosfet Power Transistor Application

Battery protection
Load switch
Uninterruptible power supply

Package Marking and Ordering Information

Product ID Pack Marking Qty(PCS)
AP8205S SOT23-6 8205S 3000

Electrical Characteristics@Tj=25C(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, I D=6A - 20.5 27
VGS=2.5V, I D=4A - 27 37
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA - 0.75 1.2 V
gfs Forward Transconductance VDS=10V, ID=6A - 6 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 25 uA

Drain-Source Leakage Current

(Tj=70 C)

VDS=20V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA
Qg Total Gate Charge 2 ID=6A - 11 17.6 nC
Qgs Gate-Source Charge - 1.1 - nC
Qgd Gate-Drain ("Miller") Charge - 4.1 - nC
td(on) Turn-on Delay Time 2 VDS=10V - 4.2 - ns

r

t

Rise Time - 9 - ns
td(off) Turn-off Delay Time - 23 - ns

f

t

Fall Time - 3.5 - ns
Ciss Input Capacitance

VGS=0V

- 570 910 pF
Coss Output Capacitance - 90 - pF
Crss Reverse Transfer Capacitance - 85 - pF
Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω
VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V
trr Reverse Recovery Time 2 IS=6A, VGS=0V, dI/dt=100A/µs - 21 - ns
Qrr Reverse Recovery Charge - 14 - nC
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, I D=6A - 20.5 27
VGS=2.5V, I D=4A - 27 37
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA - 0.75 1.2 V
gfs Forward Transconductance VDS=10V, ID=6A - 6 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 25 uA

Drain-Source Leakage Current

(Tj=70 C)

VDS=20V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA
Qg Total Gate Charge 2 ID=6A - 11 17.6 nC
Qgs Gate-Source Charge - 1.1 - nC
Qgd Gate-Drain ("Miller") Charge - 4.1 - nC
td(on) Turn-on Delay Time 2 VDS=10V - 4.2 - ns

r

t

Rise Time - 9 - ns
td(off) Turn-off Delay Time - 23 - ns

f

t

Fall Time - 3.5 - ns
Ciss Input Capacitance

VGS=0V

- 570 910 pF
Coss Output Capacitance - 90 - pF
Crss Reverse Transfer Capacitance - 85 - pF
Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω
VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V
trr Reverse Recovery Time 2 IS=6A, VGS=0V, dI/dt=100A/µs - 21 - ns
Qrr Reverse Recovery Charge - 14 - nC

Attention

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

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Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed

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Brand Name :
Hua Xuan Yang
Model Number :
AP8205S
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
Negotiation
Price :
Negotiated
Contact Supplier
Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed
Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed
Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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