AP10H03S 10A 30V SOP-8 Mosfet Power Transistor Vertical Structure

Mosfet Power Transistor Description:

The AP10H03S is the highest performance trench
N-ch MOSFETs with extreme high cell density,
which provide excellent RDSON and gate charge
for most of the small power switching and
load switch applications. The meet the RoHS and
Product requirement with full function reliability approved.

Mosfet Power Transistor Features

VDS = 30V ID = 10A
RDS(ON) < 12mΩ @ VGS=4.5V
RDS(ON) < 16.5mΩ @ VGS=2.5V

Mosfet Power Transistor Application

Battery protection
Load switch
Uninterruptible power supply

Package Marking and Ordering Information

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

3 . The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A

4. The power dissipation is limited by 175℃ junction temperature

5. The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation.

Attention

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