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AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System
AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System
AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System
AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System
AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System
AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System
Specifications
Brand Name :
Hua Xuan Yang
Model Number :
AP5N10SI
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
Negotiation
Price :
Negotiated
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Product name :
N Channel Mosfet Power Transistor
Model :
AP5N10SI
Pack :
SOT89-3
Marking :
AP5N10SI YYWWWW
VDSDrain-Source Voltage :
100V
VGSGate-Sou rce Voltage :
±20A
Description

AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

N Channel Mosfet Power Transistor Description:

The AP5N10SI is the single N-Channel logic

enhancement mode power field effect transistors to

provide excellent R DS(on), low gate charge and low

gate resistance. It ’s up to 30V operation voltage is well suited in switching mode power supply, SMPS,

notebook computer power management and other

battery powered circuits.

N Channel Mosfet Power Transistor Features:

RDS(ON)<125m Ω @VGS=10V (N-Ch)

RDS(ON)<135mΩ @VGS =4.5V (N-Ch)

Super high density cell design for extremely low

RDS(ON) Exceptional on-resistance and maximum DC current

N Channel Mosfet Power Transistor Applications:

Switching power supply, SMPS

Battery Powered System

DC/DC Converter

DC/AC Converter

Load Switch

Package Marking and Ordering Information

Product ID Pack Marking Qty(PCS)
AP5N10SI SOT89-3 AP5N10SI YYWWWW 1000

Table 1.Absolute Maximum Ratings (TA=25℃)

Symbol Parameter Value Unit
VDS Drain-Source Voltage (VGS=0V) 100 V
VGS Gate-Source Voltage (VDS=0V) ±25 V

D

I

 Drain Current-Continuous(Tc=25 ℃) 5 A
Drain Current-Continuous(Tc=100 ℃) 3.1 A
IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 1) 20 A
PD Maximum Power Dissipation 9.3 W
TJ,TSTG Operating Junction and Storage Temperature Range -55 To 150 ℃
Symbol Parameter Value Unit
VDS Drain-Source Voltage (VGS=0V) 100 V
VGS Gate-Source Voltage (VDS=0V) ±25 V

D

I

 Drain Current-Continuous(Tc=25 ℃) 5 A
Drain Current-Continuous(Tc=100 ℃) 3.1 A
IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 1) 20 A
PD Maximum Power Dissipation 9.3 W
TJ,TSTG Operating Junction and Storage Temperature Range -55 To 150 ℃

Table 2.Thermal Characteristic

Symbol Parameter Typ Value Unit
R JA Thermal Resistance, Junction-to-Ambient - 13.5 ℃/W

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Unit
On/Off States
BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 100 V
IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V 100 μA
IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS,ID=250 μA 1 1.5 3 V

RDS(ON)

Drain-Source On-State Resistance

 VGS=10V, ID= 10A 110 125 m Ω
VGS=4.5V, ID=-5A 120 135 m Ω
Dynamic Characteristics
Ciss Input Capacitance

VDS=25V,VGS=0V, f=1.0MHz

 690 pF
Coss Output Capacitance 120 pF
Crss Reverse Transfer Capacitance 90 pF
Switching Times
td(on) Turn-on Delay Time 11 nS

r

t

 Turn-on Rise Time 7.4 nS
td(off) Turn-Off Delay Time 35 nS

f

t

 Turn-Off Fall Time 9.1 nS
Qg Total Gate Charge VDS=15V,ID=10A V GS=10V 15.5 nC
Qgs Gate-Source Charge 3.2 nC
Qgd Gate-Drain Charge 4.7 nC
Source-Drain Diode Characteristics
ISD Source-Drain Current(Body Diode) 20 A
VSD Forward on Voltage (Note 1) VGS=0V,IS=2A 0.8 V

Reflow Soldering:

The choice of heating method may be influenced by plastic QFP package). If infrared or vapor phase heating is used and

the package is not absolutely dry (less than 0.1% moisture content by weight), vaporization of the small amount of moisture

in them can cause cracking of the plastic body. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.

Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stenciling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method.

Typical reflow peak temperatures range from 215 to 270 °C depending on solder paste material. The top-surface

temperature of the packages should preferable be kept below 245 °C for thick/large packages (packages with a thickness

2.5 mm or with a volume 350 mm

3

so called thick/large packages). The top-surface temperature of the packages should

preferable be kept below 260 °C for thin/small packages (packages with a thickness < 2.5 mm and a volume < 350 mm so called thin/small packages).

Stage Condition Duration
1’st Ram Up Rate max3.0+/-2 /sec -
Preheat 150 ~200 60~180 sec
2’nd Ram Up max3.0+/-2 /sec -
Solder Joint 217 above 60~150 sec
Peak Temp 260 +0/-5 20~40 sec
Ram Down rate 6 /sec max -

Wave Soldering:

Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.

Manual Soldering:

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.

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AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

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Product Detail
Brand Name :
Hua Xuan Yang
Model Number :
AP5N10SI
Certification :
RoHS、SGS
Place of Origin :
ShenZhen China
MOQ :
Negotiation
Price :
Negotiated
Contact Supplier
AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System
AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System
AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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