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1.38W 20A Power Transistor ICs AP2302AGN-HF APEC
1.38W 20A Power Transistor ICs AP2302AGN-HF APEC
Specifications
Brand Name :
Hua Xuan Yang
Model Number :
AP2302AGN-HF
Certification :
RoHS、SGS
Place of Origin :
China
MOQ :
Negotiable
Price :
Negotiate
Payment Terms :
Western Union, L/C, T/T
Supply Ability :
10,000PCS/MONTH
Delivery Time :
4~5 week
Packaging Details :
Carton Box
RoHs Status: :
Lead free / RoHS Compliant
Quality: :
100% Original New
D/C: :
Newest
Description :
AP2302AGN-HF APEC
Type: :
IC
Description

Specialized Hot ICs AP2302AGN-HF APEC AP2302AGN-HF

Description

AP2302A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +8 V
ID@TA=25℃ Drain Current3, VGS @ 4.5V 4.6 A
ID@TA=70℃ Drain Current3, VGS @ 4.5V 3.7 A
IDM Pulsed Drain Current1 20 A
PD@TA=25℃ Total Power Dissipation 1.38 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3 90 ℃/W

AP2302AGN-H

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON)

Static Drain-Source On-Resistance2

 VGS=4.5V, ID=4A - - 42 mΩ
VGS=2.5V, ID=3A - - 60 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.3 - 1.2 V
gfs Forward Transconductance VDS=5V, ID=4A - 14 - S
IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +100 nA
Qg Total Gate Charge2

ID=4A VDS=10V

VGS=4.5V

 - 6.5 10.5 nC
Qgs Gate-Source Charge - 1 - nC
Qgd Gate-Drain ("Miller") Charge - 2.5 - nC
td(on) Turn-on Delay Time2

VDS=10V ID=1A RG=3.3Ω

VGS=5V

 - 9 - ns
tr Rise Time - 12 - ns
td(off) Turn-off Delay Time - 16 - ns
tf Fall Time - 5 - ns
Ciss Input Capacitance

VGS=0V VDS=20V

f=1.0MHz

 - 300 480 pF
Coss Output Capacitance - 85 - pF
Crss Reverse Transfer Capacitance - 80 - pF
Rg Gate Resistance f=1.0MHz - 2 - Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2

IS=4A, VGS=0V,

dI/dt=100A/µs

 - 20 - ns
Qrr Reverse Recovery Charge - 10 - nC

Notes:

1.Pulse width limited by Max. junction temperature.
2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad.

Payment:

We accept the payment terms: Telegraphic Transfer(T/T) in advance / PayPal / Western Union / Escrow sevice or Net terms(Long-term cooperation).

We can support many kinds of currency, such as USD; HKD; EUR; CNY and Others, please contact us.

Product tags

2sc5200 equivalent transistor

,

power transistor datasheet

,

power transistor 2n3055
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1.38W 20A Power Transistor ICs AP2302AGN-HF APEC

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Product Detail
Brand Name :
Hua Xuan Yang
Model Number :
AP2302AGN-HF
Certification :
RoHS、SGS
Place of Origin :
China
MOQ :
Negotiable
Price :
Negotiate
Contact Supplier
1.38W 20A Power Transistor ICs AP2302AGN-HF APEC

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
6 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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